Laser Emission in Nitrogen-Implanted GaAs_<1-x>P_x(x=0.36 and 0.43)

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Translational Phase Domains in the Cation Sublattice of Chalcopyrite Compounds
The Effect of Doping on Interface Morphology in LPE Al_xGa_As
Heteroepitaxial Growth of GaP on Silicon by Molecular Beam Epitaxy
Molecular Beam Epitaxial Growth of InP
Characterization and Substrate-Temperature Dependence of Crystalline State of GaAs Grown by Molecular Beam Epitaxy
Effect of Degradation on Intensity Fluctuation in cw AlGaAs Double-Heterostructure Junction Lasers
Morphology, Structure and Photoluminescence Properties of Zinc Oxide Films Prepared by Excimer Laser Irradiation of Sol-Gel-Derived Precursors : Semiconductors
A Novel Method for the Preparation of Green Photoluminescent Undoped Zinc Oxide Film Involving Excimer Laser Irradiation of a Sol-Gel-Derived Precursor
The Initial Growth Stage of the InAs Quantum Well Structures on Variously Oriented GaAs Substrates
Effect of Multiple-Step Annealing on the Formation of Semiconducting β-FeSi_2 and Metallic α-Fe_2Si_5 on Si (100) by Ion Beam Synthesis
Sharp Optical Emission from CuInSe_2 Thin Films Grown by Molecular Beam Epitaxy
Molecular Beam Epitaxial Growth and Properties of CuInSe_2
A Molecular and Jon-Beam Epitaxy System for the Growth of III-V Compound Semiconductors Using a Mass-Separated, Low-Energy Group-V Jon Beam
Molecular Beam Epitaxy of InP Using Low Energy P^+ Ion Beam
Photoluminescence of Indirect-Band-Gap GaAs_P_x (x=0.52) Implanted with Nitrogen Ions
Hot Implantation of Nitrogen Ions into GaAs_P_x (x=0.36)
Magnetic Anomaly in the Metallic Impurity Conduction
Temperature Dependence of the Resistivity in the Impurity Conduction of n-type Germanium
Synthesis and Properties of Semiconducting Iron Disilicide β-FeSi_2
Electron Spin Resonance in Phosphorus Doped Silicon at Low Temperatures
Electron Spin Relaxation Time of Heavily P^ Doped Silicon
Photoluminescence of Nitrogen-Implanted GaAs_P_x (x=0.44) near the Direct-Indirect-Transition Point
Molecular Beam Epitaxy of GaP and GaAs_P_x
Annealing Temperature Dependence of Photoluminescence in N-Implanted GaAs_P_x (x=0.36)
Laser Emission in Nitrogen-Implanted GaAs_P_x(x=0.36 and 0.43)
Photoluminescence Properties of ZnSe Thin Films Grown by Molecular Beam Epitaxy
Growth Rate and Sticking Coefficient of ZnSe and ZnTe Grown by Molecular Beam Epitaxy
Molecular Beam Epitaxy of ZnTe Single Crystal Thin Films
Energy Relaxation Process in n-Type InSb under Strong Longitudinal Magnetic Fields
Electron Paramagnetic Resonance in BaTiO_3 Near the Curie Temperature
Crystalline Fields Anomalies of Diluted (NH_4)Fe(So_4)_212H_2O at Low
Generation of Anomalous High Energy Picosecond X-Ray Pulse from Laser-Produced Plasma
Shift of Electron Spin Resonance Line in Phosphorus-Doped Silicon
Electron Spin Resonance Studies of Interacting Donor Clusters in Phosphorus-Doped Silicon
Anomalous ESR Line Width of Phosphorus Doped Silicon in the Metallic Conduction Region
Paramagnetism of Phosphorus Doped Silicon in the Non-Metallic Impurity Conduction

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