Crystalline Fields Anomalies of Diluted (NH_4)Fe(So_4)_212H_2O at Low
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人日本物理学会の論文
- 1962-07-05
著者
関連論文
- Photoluminescence of Indirect-Band-Gap GaAs_P_x (x=0.52) Implanted with Nitrogen Ions
- Hot Implantation of Nitrogen Ions into GaAs_P_x (x=0.36)
- Magnetic Anomaly in the Metallic Impurity Conduction
- Electron Spin Resonance in Phosphorus Doped Silicon at Low Temperatures
- Electron Spin Relaxation Time of Heavily P^ Doped Silicon
- Laser Emission in Nitrogen-Implanted GaAs_P_x(x=0.36 and 0.43)
- Photoluminescence Properties of ZnSe Thin Films Grown by Molecular Beam Epitaxy
- Growth Rate and Sticking Coefficient of ZnSe and ZnTe Grown by Molecular Beam Epitaxy
- Molecular Beam Epitaxy of ZnTe Single Crystal Thin Films
- Energy Relaxation Process in n-Type InSb under Strong Longitudinal Magnetic Fields
- Electron Paramagnetic Resonance in BaTiO_3 Near the Curie Temperature
- Crystalline Fields Anomalies of Diluted (NH_4)Fe(So_4)_212H_2O at Low
- Generation of Anomalous High Energy Picosecond X-Ray Pulse from Laser-Produced Plasma
- Shift of Electron Spin Resonance Line in Phosphorus-Doped Silicon
- Electron Spin Resonance Studies of Interacting Donor Clusters in Phosphorus-Doped Silicon
- Anomalous ESR Line Width of Phosphorus Doped Silicon in the Metallic Conduction Region
- Paramagnetism of Phosphorus Doped Silicon in the Non-Metallic Impurity Conduction