Electron Spin Resonance in Phosphorus Doped Silicon at Low Temperatures

概要

論文の詳細を見る
Effects of exchange and motion of electrons on electron spin resonance spectrum of phosphorus doped Si with concentration of 3×10^<16>cm^<-3>〜3 ×10^<19>cm^<-3> were investigated at liquid helium temperatures and at about 9300 Mc/sec. At lower concentrations, the intensity of the exchange coupled resonance line was measured as functions of temperature and donor concentration. Electrons are antiferromagnetically coupled, and the exchange energy increases with increasing donor concentration. At higher concentrations, a sharp resonance line was observed. The temperature dependences of the line width and intensity were measured as a function of impurity concentration. The sharp line originates from localized electrons rather than from non-localized electrons contributing to the electronic conduction. At the region of the highest concentrations, where an impurity band is formed, the line width is independent of temperature and becomes larger with increasing concentration. Discussions are given in relation to the impurity conduction.
社団法人日本物理学会の論文
1965-08-05