Critical Field Anisotropy in "2K-Superconducting State"of Organic Superconductor β-(BEDT-TTF)_2I_3
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概要
- 論文の詳細を見る
The anisotropy of the upper critical field H.. has been measured at ambientpressure on a layered organic superconductor /7-(BEDT-TTF').1. both in the statesbefore and after annealing at 109 K for 120 hours. By annealing, the critical temperalure T. increases from 1.4 to 2.08 K, while the H...,.... increascs and the anisotropy,H.z,..../H...,g..., decreases. The angular dependeutces of H.. for both states are ex-plained in terms of the effective mass model. It is clarified that the enhanced T. whichis ascribed to the annealing-induced configurational orderings of ethylene groups isclosely related to the enhanced effective mass in the basal plaune./7-(BEDT-TTF).1, critical field anisotropy
- 社団法人日本物理学会の論文
- 1989-10-15
著者
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KAGOSHIMA Seiichi
Department of Basic Science, University of Tokyo
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Sasaki Takahiko
Institute for Materials Research, Tohoku University
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Toyota Naoki
Institute for Materials Research, Tohoku University
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Tokumoto M
Electrotechnical Lab. Ibaraki
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Tokumoto H
Electrotechnical Laboratory
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ANZAI Hiroyuki
Electrotechnical Laboratory
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Takasaki S
Himeji Inst. Technol. Kamigohri
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Sasaki Takahiko
Department Of Material Science Himeji Institute Of Technology
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Osada Toshihito
Department of Pure and Applied Sciences, University of Tokyo
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TOKUMOTO Madoka
Electrotechnical Laboratory
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KINOSHITA Nobumori
Electrotechnical Laboratory
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Toyota N
Physics Department Graduate School Of Science Tohoku University
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Namiki Takahisa
Institute For Materials Research Tohoku University
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Toyota Naoki
Institute For Materials Research Tohoku University
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Toyota Naoki
The Research Institute For Iron Steel And Other Metals Tohoku University
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Sasaki T
Division Of Materials Physics Department Of Physical Science Graduate School Of Engineering Science
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Tateiwa Naoyuki
Graduate School Of Science Tohoku University:(present) Department Of Physical Science Graduate Schoo
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Sasaki T
Institute For Materials Research Tohoku University
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ANZAI Hiroyuki
Department of Material Science, Himeji Institute of Technology
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HASUMI Masahiko
Department of Pure and Applied Science,University of Tokyo
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Kagoshima Seiichi
Institute For Protein Research Osaka University
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Kagoshima S
Department Of Basic Science University Of Tokyo
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Kagoshima Seiichi
Department Of Art And Science The University Of Tokyo
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Anzai H
Himeji Inst. Technol. Kamigohri Jpn
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Anzai Hiroyuki
Electrotechnical Laboratory Umezono
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Tokumoto Madoka
Electrotechnical Laboratory Sakura-mura Niihari-gun
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Sasaki Takatomo
Institute Of Laser Engineering Department Of Electrical Engineering Osaka University
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Osada Toshihito
Department Of Pure And Applied Science University Of Tokyo
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Sasaki Takahiko
Institute For Materials Research Tohoku University
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Sakaguchi K
Institute For Protein Research Osaka University
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Anzai H
Department Of Material Science Faculty Of Science Himeji Institute For Technology
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Kinoshita N
Electrotechnical Laboratory
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Tokumoto M
Nanotechnology Research Institute National Institute Of Advanced Industrial Science And Technology (
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Hasumi Masahiko
Department Of Pure And Applied Science University Of Tokyo
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Hasumi Masahiko
Department Of Electrical And Electronic Engineering Tokyo University Of Agriculture And Technology
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Osada Toshihito
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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Anzai Hiroyuki
Electrotechmical Laboratory
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Terada N
Musashi Inst. Technology Tokyo
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Tokumoto Madoka
Electronics and Photonics Research Institute (EPRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Sasaki Tetsuya
Institute for Materials Research, Tohoku University
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Sasaki Takahiko
Institute for Materials Reseach, Tohoku University, 2-1-1 Katahira-cho, Aoba-ku, Sendai 980-8577, Japan
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