Anomalous ESR Line Width of Phosphorus Doped Silicon in the Metallic Conduction Region

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概要

• 論文の詳細を見る
• 社団法人日本物理学会の論文
• 1966-06-05

著者

• Maekawa Shigeru

  Electronical Laboratory

関連論文

• Photoluminescence of Indirect-Band-Gap GaAs_P_x (x=0.52) Implanted with Nitrogen Ions
• Hot Implantation of Nitrogen Ions into GaAs_P_x (x=0.36)
• Magnetic Anomaly in the Metallic Impurity Conduction
• Electron Spin Resonance in Phosphorus Doped Silicon at Low Temperatures
• Electron Spin Relaxation Time of Heavily P^ Doped Silicon
• Laser Emission in Nitrogen-Implanted GaAs_P_x(x=0.36 and 0.43)
• Photoluminescence Properties of ZnSe Thin Films Grown by Molecular Beam Epitaxy
• Growth Rate and Sticking Coefficient of ZnSe and ZnTe Grown by Molecular Beam Epitaxy
• Molecular Beam Epitaxy of ZnTe Single Crystal Thin Films
• Energy Relaxation Process in n-Type InSb under Strong Longitudinal Magnetic Fields
• Electron Paramagnetic Resonance in BaTiO_3 Near the Curie Temperature
• Crystalline Fields Anomalies of Diluted (NH_4)Fe(So_4)_212H_2O at Low
• Generation of Anomalous High Energy Picosecond X-Ray Pulse from Laser-Produced Plasma
• Shift of Electron Spin Resonance Line in Phosphorus-Doped Silicon
• Electron Spin Resonance Studies of Interacting Donor Clusters in Phosphorus-Doped Silicon
• Anomalous ESR Line Width of Phosphorus Doped Silicon in the Metallic Conduction Region
• Paramagnetism of Phosphorus Doped Silicon in the Non-Metallic Impurity Conduction

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