Magnetic Anomaly in the Metallic Impurity Conduction
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概要
- 論文の詳細を見る
- 社団法人日本物理学会の論文
- 1967-03-05
著者
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KINOSHITA Joji
Electrotechnical Laboratory, National Institute of Advanced Industrial Science and Technology
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Kinoshita Joji
Electrotechnical Laboratory
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Maekawa Shigeru
Electrotechnical Laboratory
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Maekawa Shigeru
Electronical Laboratory
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SASAKI Wataru
Electrotechnical Laboratory
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Sasaki Wataru
Electrotechnical Labolatory
関連論文
- Improved Quantum Hall Standard of Resistance at Electrotechnical Laboratory(General Physics)
- Resistance Ratio Bridge Using Cryogenic Current Comparator with DC-Superconducting Quantum Interference Device Magnetometer
- Determination of the Fine Structure Constant Based on the Quantum Hall Effect
- Quantized Hall Resistivity in Si-MOSFETs Measured at Liq.^3He Temperatures
- Photoluminescence of Indirect-Band-Gap GaAs_P_x (x=0.52) Implanted with Nitrogen Ions
- Hot Implantation of Nitrogen Ions into GaAs_P_x (x=0.36)
- Piezoresistance and Piezo-Hall Effect in Heavily Doped n-Type Silicon
- Magnetic Anomaly in the Metallic Impurity Conduction
- Piezoresistance and Magnetic Susceptibility in Heavily Doped n-Type Silicon
- Temperature Dependence of the Resistivity in the Impurity Conduction of n-type Germanium
- Far-Infrared Photoconductivity in Phosphorus Doped n-Type Silicon in the Intermediate Impurity Concentration Region under Uniaxial Compressional Stress
- Electron Spin Resonance in Phosphorus Doped Silicon at Low Temperatures
- Electron Spin Relaxation Time of Heavily P^ Doped Silicon
- Intervalley Scattering of Hot Electrons
- Laser Emission in Nitrogen-Implanted GaAs_P_x(x=0.36 and 0.43)
- Anisotropy of Hot Electrons in n-type Germanium
- Photoluminescence Properties of ZnSe Thin Films Grown by Molecular Beam Epitaxy
- Growth Rate and Sticking Coefficient of ZnSe and ZnTe Grown by Molecular Beam Epitaxy
- Molecular Beam Epitaxy of ZnTe Single Crystal Thin Films
- Energy Relaxation Process in n-Type InSb under Strong Longitudinal Magnetic Fields
- Electric Conduction in Phosphorus Doped Silicon at Low Temperatures
- Electron Paramagnetic Resonance in BaTiO_3 Near the Curie Temperature
- Acoustoelectric Effect in n-type Germaniun
- The Effect of Tensile Stress on Impurity Conduction in n-type Germanium
- Galvanomagnetic Effects of a Heavily Doped Germanium Crystal
- Low Temperature Piezorresistance in n-Germanium
- The Temperature Dependence of the Superconducting Energy Gap of Gallium Single Crystal Obtained from Tunneling Measurements
- Anomalous Temperature Dependence of the Impurity Conduction in n-type Germanium
- On the Anomalous Magnetoresistance Erect in n-InSb
- Crystalline Fields Anomalies of Diluted (NH_4)Fe(So_4)_212H_2O at Low
- Anomaly in the Temperature Dependence of Metallic Impurity Conduction
- Generation of Anomalous High Energy Picosecond X-Ray Pulse from Laser-Produced Plasma
- Shift of Electron Spin Resonance Line in Phosphorus-Doped Silicon
- Electron Spin Resonance Studies of Interacting Donor Clusters in Phosphorus-Doped Silicon
- Anomalous ESR Line Width of Phosphorus Doped Silicon in the Metallic Conduction Region
- Paramagnetism of Phosphorus Doped Silicon in the Non-Metallic Impurity Conduction
- Galvanomagnetic Effects in n-type Indium Antimonide at Very Low Temperatures
- Electrical Resistivity of SiC
- Oscillatory Galvanomagnetic Effects in n=type Indium Antimonide
- Evaluation of a Quantum Hall Effect System of Small Size for Use as Resistance Standard
- On the Effective Mass of the Conduction Electron in Germanium
- Silicocarbon—Thermal Decomposition Product of Silicone Resin
- Anisotropy of the Superconducting Energy Gap of Gallium Single Crystal Determined by Tunneling
- Negative Magnetoresistance in the Metallic Impurity Conduction of n-Type Germanium
- On the Effective Mass of the Conduction Electron in Germanium