Piezoresistance and Magnetic Susceptibility in Heavily Doped n-Type Silicon
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概要
- 論文の詳細を見る
Piezoresistance and static magnetic susceptibiliy are measured on phosphorus doped silicon with the donor concentration ranging from 6.10^<18>cm^<-3> to 1.5・10^<20>cm^<-3> and without compensation. Measurements are done over the temperature range from 1.5°K to 500°K The piezoresistance is in excellent accord with a picture that the donor electrons are in a rigid band with the same mass parameters as the conduction band of pure silicon, while the magnetic susceptibility shows deviation from this picture in two respects: one is the additional Curie type paramagnetism predominant at the lowest temperatures and the other is the large Pauli paramagnetism consistent only with larger and concentration dependent effective mass. A discussion is given of the source of these anomalies.
- 社団法人日本物理学会の論文
- 1968-12-05
著者
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KINOSHITA Joji
Electrotechnical Laboratory, National Institute of Advanced Industrial Science and Technology
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Kinoshita Joji
Electrotechnical Laboratory
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SASAKI Wataru
Electrotechnical Laboratory
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Sasaki Wataru
Electrotechnical Laboratory:(present Address) Department Of Physics University Of Tokyo
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Sasaki Wataru
Electrotechnical Labolatory
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