Low Temperature Piezorresistance in n-Germanium
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概要
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Quite different types of piezoresistance are observed in n-type germanium for the impurity conduction of low, intermediate, and high concentration regions. In the low concentration region, the effect is well explained by considering the distortion of an impurity wave function through a change of the contribution of different energy valleys caused by a stress.^<1)> The effect in the intermediate samples also seems to be correlated with the distortion of an impurity wave function.^<2)> In the high concentration region, the effect is consistent with a four-valley model in which the impurity band electrons consist of four groups with anisotropic mobilities and deformation potentials quite similar to the case of the conduction band. This is the case both for very heavily doped samples,^<3)> where the mixing of impurity states into the conduction band is admitted, and for a less heavily doped sample,^<4)> where the mixing is an inadequate model. This note describes the piezoresistance effect observed in high concentration samples containing less than 10^<18>cm^<-3> antimony or arsenic atoms. The Hall coefficient versus temperature curves for these samples show a maximum at a temperature below liquid nitrogen temperature and the resistivity below the temperature of Hall maximum is higher than that above the maximum.^<5)> This fact indicates that the impurity band for these samples is separated below the conduction band and that the mobility of electrons in the former is lower than that in the conduction band.
- 社団法人日本物理学会の論文
- 1964-02-05
著者
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SASAKI Wataru
Electrotechnical Laboratory
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Sasaki Wataru
Electrotechnical Laboratory Nagatacho
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Nakamura Mitsuko
Electrotechnical Laboratory
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Sasaki Wataru
Electrotechnical Labolatory
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Nakamura Mitsuko
Electrotechnical Laboratory Nagatacho
関連論文
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- Piezoresistance and Magnetic Susceptibility in Heavily Doped n-Type Silicon
- Temperature Dependence of the Resistivity in the Impurity Conduction of n-type Germanium
- Intervalley Scattering of Hot Electrons
- Anisotropy of Hot Electrons in n-type Germanium
- Electric Conduction in Phosphorus Doped Silicon at Low Temperatures
- Acoustoelectric Effect in n-type Germaniun
- The Effect of Tensile Stress on Impurity Conduction in n-type Germanium
- Galvanomagnetic Effects of a Heavily Doped Germanium Crystal
- Low Temperature Piezorresistance in n-Germanium
- The Temperature Dependence of the Superconducting Energy Gap of Gallium Single Crystal Obtained from Tunneling Measurements
- Anomalous Temperature Dependence of the Impurity Conduction in n-type Germanium
- On the Anomalous Magnetoresistance Erect in n-InSb
- De Haas-Shubnikov Oscillation of the Impurity Band in n-Type Germanium
- Anomaly in the Temperature Dependence of Metallic Impurity Conduction
- Galvanomagnetic Effects in n-type Indium Antimonide at Very Low Temperatures
- Electrical Resistivity of SiC
- Oscillatory Galvanomagnetic Effects in n=type Indium Antimonide
- On the Effective Mass of the Conduction Electron in Germanium
- Silicocarbon—Thermal Decomposition Product of Silicone Resin
- Anisotropy of the Superconducting Energy Gap of Gallium Single Crystal Determined by Tunneling
- Negative Magnetoresistance in the Metallic Impurity Conduction of n-Type Germanium
- On the Effective Mass of the Conduction Electron in Germanium