Piezoresistance and Piezo-Hall Effect in Heavily Doped n-Type Silicon

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概要

• 論文の詳細を見る

• Stress dependence of resistivity and Hall coefficient of Phosphorus doped n-type silicon in metallic impurity conduction region has been studied at three temperatures 4.2K, 77K and 300K. It is shown that mobility or collision time derived from the date at 4.2K by assuming a rigid band model decreases with increasing kinetic energy of electrons contrary to the ordinary energy dependence of mobility due to the scattering by charged impurities. This fact suggests that the charged carrier is scattered by the density fluctuation of impurities rather than by individual impurity potentials.

• 社団法人日本物理学会の論文
• 1972-09-05

著者

• KINOSHITA Joji

  Electrotechnical Laboratory, National Institute of Advanced Industrial Science and Technology

• Kinoshita Joji

  Electrotechnical Laboratory

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• Far-Infrared Photoconductivity in Phosphorus Doped n-Type Silicon in the Intermediate Impurity Concentration Region under Uniaxial Compressional Stress
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