Far-Infrared Photoconductivity in Phosphorus Doped n-Type Silicon in the Intermediate Impurity Concentration Region under Uniaxial Compressional Stress

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Improved Quantum Hall Standard of Resistance at Electrotechnical Laboratory(General Physics)
Resistance Ratio Bridge Using Cryogenic Current Comparator with DC-Superconducting Quantum Interference Device Magnetometer
Determination of the Fine Structure Constant Based on the Quantum Hall Effect
Quantized Hall Resistivity in Si-MOSFETs Measured at Liq.^3He Temperatures
Piezoresistance and Piezo-Hall Effect in Heavily Doped n-Type Silicon
Magnetic Anomaly in the Metallic Impurity Conduction
Piezoresistance and Magnetic Susceptibility in Heavily Doped n-Type Silicon
Far-Infrared Photoconductivity in Phosphorus Doped n-Type Silicon in the Intermediate Impurity Concentration Region under Uniaxial Compressional Stress
Electric Field Dependence of Junction Paraconductivity
Electric Conduction in Phosphorus Doped Silicon at Low Temperatures
Note on the Magnetoresistance in Dilute Magnetic Alloys
Anisotropy of the Superconducting Energy Gap of Gallium Single Crystal Obtained from Tunneling Experiments
The Temperature Dependence of the Superconducting Energy Gap of Gallium Single Crystal Obtained from Tunneling Measurements
On the Anomalous Magnetoresistance Erect in n-InSb
Hall Coefficient and Resistivity in the Intermediate Impurity Conduction of n-Type Germanium
Magnetoresistance in the Impurity Conduction of n-type Germanium
Absorption of Sub-mm Radiation in Antimony Doped Germanium in the Matallic Type Impurity Conduction Region
Temperature Dependence of Negative Longitudinal Magnetoresistance in n-Type Indium Antimonide
Far Infrared Photoconductiviy in Antimony Doped Germanium in the Intermediate Impurity Concentration Region
Negative Longitudinal Magnetoresistance in n-Type Indium Antimonide at 77K
Absorption of Sub-mm Radiation in Antimony Doped Germanium in the Intermediate Impurity Concentration Region
Effects of the Magnetic Field on the Intermediate Impurity Conduction in n-Type Germanium
Evaluation of a Quantum Hall Effect System of Small Size for Use as Resistance Standard
Anisotropy of the Superconducting Energy Gap of Gallium Single Crystal Determined by Tunneling
Magnetoresistance in the Impurity Conduction of n-Type Germanium

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