Effects of the Magnetic Field on the Intermediate Impurity Conduction in n-Type Germanium
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概要
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Magnetic field dependence of resistivity ρ and Hall coefficient R_H of antimony-doped germanium samples containing between 2×10^<16> and 1×10^<17> cm^<-3> excess donors have been measured below 4.2°K. These samples belong to the hopping or the intermediate region of the impurity conduction and the temperature dependence of ρ obeys an exponential law ρ_∞ exp (ε/kT). The main effect of the magnetic field is an increase of preexponential factor ρ_∞ for the hopping samples while it is an increase of activation energy ε for the intermediate ones. The increase of ε is proportional to H^2 and the proportionality coefficient depends on donor concentration, compensation ratio and it also depends slightly on temperature. A model which can qualitatively explain these features of intermediate impurity conduction is proposed.
- 社団法人日本物理学会の論文
- 1963-12-05
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