Hall Coefficient and Resistivity in the Intermediate Impurity Conduction of n-Type Germanium
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概要
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Measurements of the Hall coefficient and resistivity on antimony- and arsenic-doped germanium samples in the intermediate impurity conduction range have been made employing magnetic fields up to 20kOe. The Hall coefficient R_H for all the samples investigated increases as the temperature is lowered. In the case of As-doped samples, R_H increases with increasing H showing a consistency with its temperature dependence. In the case of Sb-doped samples, R_H decreases with increasing H. This fact suggests that the relation R_H=-1/ne is not satisfactory for the previously proposed D- band model, and that further refinement on this model is required.
- 社団法人日本物理学会の論文
- 1965-06-05
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