Magnetoresistance in the Impurity Conduction of n-type Germanium
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概要
- 論文の詳細を見る
- 社団法人日本物理学会の論文
- 1962-10-05
著者
-
YAMANOUCHI Chikako
Electrotechnical Laboratory
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Yamanouchi Chikako
Electrotechnical Laboratory Nagatacho
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SASAKI Watatu
Electrotechnical Laboratory Nagatacho
関連論文
- Quantized Hall Resistivity in Si-MOSFETs Measured at Liq.^3He Temperatures
- Far-Infrared Photoconductivity in Phosphorus Doped n-Type Silicon in the Intermediate Impurity Concentration Region under Uniaxial Compressional Stress
- Electric Conduction in Phosphorus Doped Silicon at Low Temperatures
- On the Anomalous Magnetoresistance Erect in n-InSb
- Hall Coefficient and Resistivity in the Intermediate Impurity Conduction of n-Type Germanium
- Magnetoresistance in the Impurity Conduction of n-type Germanium
- Absorption of Sub-mm Radiation in Antimony Doped Germanium in the Matallic Type Impurity Conduction Region
- Temperature Dependence of Negative Longitudinal Magnetoresistance in n-Type Indium Antimonide
- Far Infrared Photoconductiviy in Antimony Doped Germanium in the Intermediate Impurity Concentration Region
- Negative Longitudinal Magnetoresistance in n-Type Indium Antimonide at 77K
- Absorption of Sub-mm Radiation in Antimony Doped Germanium in the Intermediate Impurity Concentration Region
- Effects of the Magnetic Field on the Intermediate Impurity Conduction in n-Type Germanium
- Magnetoresistance in the Impurity Conduction of n-Type Germanium