Electric Conduction in Phosphorus Doped Silicon at Low Temperatures
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概要
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The impurity conduction in phosphorus doped n-type silicon has been investigated at temperatures between 1.1°K and 300°K. The samples ranged in concentration of excess donors from 1.2.10^<18> to 2.5.10^<20>cm^<-3>. A metallic type impurity conduction and a negative magnetoresistance are observed in samples containing higher than 4.10^<18>cm^<-8> excess donors. An intermediate type impurity conduction is observed in samples containing from 1.7.10^<18> to 4.10^<18>cm^<-3> excess donors. In metallic samples with donor concentration higher than 6.10^<18>cm^<-3>, the resistivity increases monotonically with temperature T up to the Fermi degeneracy temperature T_D of respective samples according to a simple formula, ρ(T)=ρ(4.2°K)[1+A(T/T_D)^B], where A and B are constants.
- 社団法人日本物理学会の論文
- 1967-03-05
著者
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YAMANOUCHI Chikako
Electrotechnical Laboratory
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SASAKI Wataru
Electrotechnical Laboratory
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MIZUGUCHI Kanji
Electrotechnical Laboratory
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Sasaki Wataru
Electrotechnical Labolatory
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