Kinoshita Joji | Device Fundamentals Section Electrotechnical Laboratory
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概要
関連著者
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KINOSHITA Joji
Electrotechnical Laboratory, National Institute of Advanced Industrial Science and Technology
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Kinoshita J
Tokyo Inst. Of Technol. Yokohama Jpn
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Kinoshita Joji
Device Fundamentals Section Electrotechnical Laboratory
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Kinoshita Joji
Electrotechnical Laboratory
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YOSHIHIRO Kazuo
Device Fundamentals Section, Electrotechnical Laboratory
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YAMANOUCHI Chikako
Device Fundamentals Section, Electrotechnical Laboratory
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Yamanouchi C
Device Fundamentals Section Electrotechnical Laboratory
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Yoshihiro K
Device Fundamentals Section Electrotechnical Laboratory
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KAWAJI Shinji
Department of Physics,Gakushuin University
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Inagaki Katsuya
Device Fundamentals Section Electrotechnical Laboratory
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Endo Tadashi
Electrotechnical Laboratory
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Endo T
Electrotechnical Laboratory National Institute Of Advanced Industrial Science And Technology
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Kawaji Shinji
Department Of Physics And Chemistry Gakushuin University
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NAKANISHI Masakazu
Electrotechnical Laboratory, National Institute of Advanced Industrial Science and Technology
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YOSHIHIRO Kazuo
Electrotechnical Laboratory
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YAMANOUCHI Chikako
Electrotechnical Laboratory
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Nakanishi M
Electrotechnical Laboratory National Institute Of Advanced Industrial Science And Technology
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Nakanishi Masakazu
Electrotechnical Laboratory
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INAGAKI Katsuya
Device Fundamentals Section, Electrotechnical Laboratory
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WAKABAYASHI Junichi
Department of Physics,Gakushuin University
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Inagaki Katsuya
Electrotechnical Laboratory
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Wakabayashi J
Department Of Physics Chuo University
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Wakabayashi Junichi
Department Of Physics Gakushuin University
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Wakabayashi Junichi
Department Of Patholgy Hakodate Goryoukaku Hospital
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MORIYAMA Jiro
Department of Physics,Gakushuin University
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Moriyama Jiro
Department Of Physics Gakushuin University
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WAKABAYASHI Jun-ichi
Department of Physics, Gakushuin University
著作論文
- Improved Quantum Hall Standard of Resistance at Electrotechnical Laboratory(General Physics)
- Resistance Ratio Bridge Using Cryogenic Current Comparator with DC-Superconducting Quantum Interference Device Magnetometer
- Determination of the Fine Structure Constant Based on the Quantum Hall Effect
- Quantized Hall Resistivity in Si-MOSFETs Measured at Liq.^3He Temperatures
- Far-Infrared Photoconductivity in Phosphorus Doped n-Type Silicon in the Intermediate Impurity Concentration Region under Uniaxial Compressional Stress