Endo T | Electrotechnical Laboratory National Institute Of Advanced Industrial Science And Technology

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著作論文

THE SYNTHESIS OF ALUMINUM OXIDE CROSS-LINKED MONTMORILLONITE AND ITS CATALYTIC PROPERTIES
DLTS Study for Energy-Broadening of the Defect Level on Introducing Radiation Damage in GaP : Semiconductors and Semiconductor Devices
Conduction Band-Tail Estimated from the Temperature Dependence of X_1-X_3 Threshold Energy in Heavily-Doped n-GaP : Semiconductors and Semiconductor Devices
Deep Levels in Non-Doped and Donor-Doped GaP
Temperature Dependence of X_1-X_3 Splitting Energy in Lightly Doped GaP
Band-Edge Shift and X_1-X_3 Absorption Depending on Donor Concentration in GaP
Spatial Distributions of Damage Introduced into GaP by Collimated MeV-Electron Beams : Lateral Spreads of Damage Compared with Electron Spreads
Depth Distributions of ESR Centers Induced in Fused Quartz by Gas-Discharges
Practical Expression for Reflectances of GaP
SQUID Galvanometer for Measurements of the Quantized Hall Resistance
Influence of Voltage Divider on the Josephson Voltage Standard System
Long-Term Stability of Pb-Pb_xO_y-Pb Josephson Junction Preserved in Liquid Nitrogen
Improved Quantum Hall Standard of Resistance at Electrotechnical Laboratory(General Physics)
Resistance Ratio Bridge Using Cryogenic Current Comparator with DC-Superconducting Quantum Interference Device Magnetometer
Punchthrough Effect Observed in the ce I-V Curves of a Josephson Tunnel Junction with Microwave Radiation
Anomalous dc Characteristics of Josephson Tunnel Junction with High-Power Microwave
Heating Effect in the Josephson Junction of Pb-Pb_xO_y-Pb
Preliminary Determination of 2e/h by Josephson Effect

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