DLTS Study for Energy-Broadening of the Defect Level on Introducing Radiation Damage in GaP : Semiconductors and Semiconductor Devices
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-11-20
著者
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Sawa Kazuhiro
Department Of Electrical Engineering Faculty Of Engineering Mie University
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Sugiyama K
Tohoku Univ. Sendai Jpn
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ENDO Tamio
Faculty of Engineering, Mie University
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NISHIMURA Takao
Faculty of Engineering, Mie University
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NAKAKUKI Kiyoshi
Faculty of Engineering, Mie University
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KITAMURA Mamoru
Faculty of Engineering, Mie University
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SUGIYAMA Koichi
Faculty of Engineering, Mie University
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Endo T
Electrotechnical Laboratory National Institute Of Advanced Industrial Science And Technology
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Endo Tamio
Faculty Of Engineering Mie University
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Kitamura M
Toshiba Corp. Yokohama Jpn
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Kitamura Mamoru
Faculty Of Engineering Mie University
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Sugiyama K
National Res. Lab. Metrology Ibaraki Jpn
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Endo T
Hokkaido Univ. Sapporo Jpn
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Nishimura Takao
Faculty Of Engineering Mie University
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Nakakuki Kiyoshi
Faculty Of Engineering Mie University
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