Deep Levels in Electron-Irradiated GaP at 10 MeV

概要

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Deep levels in the electron-irradiated n-type GaP at 10 MeV were investigated by deep-level transient spectroscopy (DLTS). The DLTS spectrum depends strongly on the sample species. A total of seven different electron traps were detected from the various samples. The activation energies of the traps are 0.16, 0.26, 0.32, 0.38, 0.44, 0.62 and 0.71 eV. The individual introduction rate of the traps ranges from 0.27 to 0.73 cm-1, and the total introduction rate $\eta_{\text{total}}$ is 1.4 cm-1. The depth distribution of the trap densities indicates the high mobility of the defects under the irradiation. The experimental results suggest that the majority of radiation defects undetected by DLTS agglomerate to form very complex defects or damaged regions, and they form very deep energy levels. Broadening of the DLTS spectrum was observed.
INSTITUTE OF PURE AND APPLIED PHYSICSの論文
1989-10-20