Electron Paramagnetic Resonance and Photoluminescence Study of Defects in CuGaSe2 Single Crystals Grown by the Traveling Heater Method

概要

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Electron paramagnetic resonance (EPR) at $T = 4.2$ K and photoluminescence (PL) spectra at $T = 20$ K have been employed to elucidate point defect features in CuGaSe2 crystals grown by the traveling heater method. Isotropic and anisotropic paramagnetic centers have been found in crystals as-grown and annealed in various gas mediums. Three PL bands have been observed and the influence of H2, O2 and Se2 annealing has been studied. The presence of donor singlet $\mathrm{V}_{\text{Se}}^{+}$ has been evidenced in as-grown and H2 annealed crystals. Complex study of EPR, PL spectra and defect physics models have allowed the addition of the point defect ensemble in CuGaSe2 with defect pairs ($2\mathrm{V}_{\text{Cu}}^{-} + \text{Ga}_{\text{Cu}}^{2+}$), $\mathrm{V}_{\text{Cu}}$ and other defect complexes, according to treatments used in this work.
Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
2001-01-15