Optical Characterization of Deep Levels in Single Crystals of CuGaS2 Grown by Chemical Vapor Transport
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概要
- 論文の詳細を見る
Optical absorption spectra were measured in undoped and Fe- or Ni-doped single crystals of CuGaS2 grown by the chemical vapor transport technique. Chemical analysis of Fe concentration by absorption spectrophotometry and optical characterization by absorption and photoluminescence(PL) spectroscopy in these materials revealed that the main trace impurities which darken undoped crystals are Ni and Fe. The excitation spectrum of the infrared PL due to Fe3+ was also measured. From this, the 1.8 eV peak of the strong absorption band introduced by trace Fe impurities was interpreted in terms of the transition from the valence band to the dangling bond state hybridized with 3d orbitals.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-01-20
著者
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Sato Katsuaki
Faculty Of Technology Tokyo University Of Agriculture & Techonology
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Matsuda Seisuke
Faculty Of Agriculture Kochi University
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Tanaka Katsu
Faculty Of Technology Tokyo University Of Agriculture And Technology:nhk Science And Technical Resea
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Tanaka Katsu
Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184
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Matsuda Seisuke
Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184
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Ishii Koki
Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184
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Hasegawa Yoshitsugu
Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184
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