Optical Studies of Doping-Characteristics in Boron-Doped a-Si:H Films Prepared by the Photo-CVD Technique

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概要

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• We measured subgap optical absorption and photoluminescence spectra in boron-doped a-Si:H films prepared by photochemical vapor deposition (photo-CVD) techniques. We estimated the Urbach energy ($E_{0}$) and the density of defect states ($N_{\text{s}}$) from the subgap optical absorption spectra; the value of $N_{\text{s}}$ was estimated from PL spectra. We conclude that $N_{\text{s}}$ is approximately proportional to a square root of the boron doping level (B2H6/SiH4) and that $E_{0}$ increases linearly with an increase in the doping level. It is found that the doping mechanism proposed by Street applies to the photo-CVD films.

• 1989-06-20

著者

• Sato Katsuaki

  Faculty Of Technology Tokyo University Of Agriculture & Techonology

• KUROIWA Koichi

  Faculty of Technology, Tokyo University of Agriculture and Technology

• TARUI Yasuo

  Faculty of Technology, Tokyo University of Agriculture and Technology

• Isawa Mikio

  Faculty Of Technology Tokyo University Of Agriculture And Technology

• Yasuhiro Kazumichi

  Faculty Of Technology Tokyo University Of Agriculture And Technology

• Tarui Yasuo

  Faculty of Technology, Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo 184

• Mizukawa Satoshi

  Faculty of Technology, Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo 184

• Kuroiwa Koichi

  Faculty of Technology, Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo 184

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