Deposition of Low Hydrogen Content Silicon Nitride Film Using High-Intensity Vacuum Ultraviolet Light Source in Windowless Photochemical Vapor Deposition Reactor

概要

論文の詳細を見る
Silicon nitride (SiN) films were deposited using a windowless photochemical vapor deposition reactor, a unified reactor with a lamp, at a substrate temperature of 200℃. For vacuum ultraviolet (VUV) light emission, H_2/He mixture gas was introduced into the light source part of the reactor where 2.45 GHz microwaves were introduced through a discharge cavity. High intensity VUV light with the wavelength of 121.6 nm, which is due to Rydberg transition of electrons in H atoms from 2^2P to 1^2S, was irradiated into the deposition part of the reactor in order to dissociate source gases such as NH_3 and SiH_4 into higher order radicals of NH and SiH. Characterization of the deposited SiN film by means of Fourier transform infrared spectroscopy (FT-IR), electron spectroscopy for chemical analysis (ESCA), etc., reveals that low hydrogen content has been achieved in the SiN film with high density, high breakdown field, and high resistivity even at the low deposition temperature of 200℃.
社団法人応用物理学会の論文
1992-12-15