Molecular Beam Epitaxy of ZnTe Single Crystal Thin Films
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概要
- 論文の詳細を見る
Thin films of ZnTe single crystal were grown successfully on germanium substrates by molecular beam epitaxy. The epitaxy condition and evaluation of the grown films were extensively investigated. The evaluation and the analysis were made with a scanning electron microscope, an ion microprobe analyser, an electron-probe microanalyser, and measurements of the current-voltage characteristics and photoluminescence spectra. Twin-free and stoichiometric ZnTe films with smooth and flat surface were grown at the growth rate less than 2 Å/sec and for the substrate temperatures between 360℃ and 400℃. Photoluminescence spectra of the films show sharp near-band-edge emission bands.
- 社団法人応用物理学会の論文
- 1976-06-05
著者
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YAO Takafumi
Electrotechnical Laboratory
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MAKITA Yunosuke
Electrotechnical Laboratory
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Maekawa Shigeru
Electronical Laboratory
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Yao Takafumi
Electrical Laboratory
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AMANO Satoru
Electrotechnical Laboratory
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