Reflection High-Energy Electron Diffraction Oscillations During Molecular Beam Epitaxial Growth of ZnSe on (001)GaAs
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概要
- 論文の詳細を見る
Reflection high-energy electron diffraction (RHEED) intensity oscillations during molecular beam epitaxy (MBE) of II-VI compound of ZnSe are observed for the first time. The MBE growth was achieved on (001)GaAs substrate. After an 1-μm thick ZnSe buffer was grown, stable oscillations were observed at around the molecular beam flux ratio of Zn to Se of 1:3. One period of the oscillation corresponds to the growth rate of monomolecular layer. The observation of the oscillatory behaviors of RHEED is discussed in terms of surface morphology as is observed by RUEED.
- 社団法人応用物理学会の論文
- 1986-12-20
著者
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Yao Takafumi
Electrical Laboratory
-
Taneda Hirohito
Electrotechnical Laboratory:tokai University
-
FUNAKI Mitsuyoshi
Electrotechnical Laboratory
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Funaki Mitsuyoshi
Electrotechnical Laboratory:tokai University
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