GaAs/Al_xGa_<1-x>As Multilayer Reflector for Surface Emitting Laser Diode
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-02-20
著者
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OGURA Mutsuo
Electrotechnical Laboratory
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YAO Takafumi
Electrotechnical Laboratory
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HATA Toshio
Electrotechnical Laboratory
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KAWAI Naoyuki
Electrotechnical Laboratory
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Hata Toshio
Electrotechnical Laboratory:tokai University
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Ogura M
Jst‐crest Ibaraki Jpn
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Hata T
Kanazawa Univ. Kanazawa Jpn
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Ogura Masahiko
Energy Technology Research Institute National Institute Of Advanced Industrial Science And Technolog
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Yao Takafumi
Electrical Laboratory
関連論文
- Studies on the structure of crescent-shaped GaAs quantum wires by combination of electron microscopy and photoluminescence spectroscopy
- Proposal of a New Self-Limited Growth and Its Application to the Fabrication of Atomically Uniform Quantum Nanostructures
- Electron States in Crescent GaAs Coupled Quantum-Wires
- Fabrication of Quantum Wire and Minute Buried Heterostructure by In Situ Etching and Selective MOCVD Growth
- A Novel Growth Technique for Single-Crystal Fibers: The Micro-Czochralski (μ-CZ) Method
- Selective Growth of Buried n^+ Diamond on (001) Phosphorus-Doped n-Type Diamond Film
- Nanometer Scale Height Standard Using Atomically Controlled Diamond Surface
- Exciton-derived Electron Emission from (001) Diamond p-n Junction Diodes with Negative Electron Affinity
- High-Efficiency Excitonic Emission with Deep-Ultraviolet Light from (001)-Oriented Diamond p-i-n Junction
- Determination of Material Thermal Properties Using Photoacoustic Signals Detected by a Transparent Transducer
- Analysis of Pyroelectric Signal in Photoacoustic Spectroscopy Using a Transparent Transducer
- Influence of Piezoelectric and Pyroelectric Effects on Signal of PAS Using a Transparent Transducer : Photoacoustic Spectroscopy and Ultrasonic Imaging
- Theoretical Analysis of Photoacoustic Signal on PAS Using a Transparent Transducer : Photoacoustic Effect and Spectroscopy
- Consideration on PA Signals of Multilayer Structure Measured by PAS Using Transparent Transducer : Photoacoustic Spectroscopy
- n-Type Control by Sulfur Ion Implantation in Homoepitaxial Diamond Films Grown by Chemical Vapor Deposition
- Distributed Feed Back Surface Emitting Laser Diode with Multilayered Heterostructure
- GaAs/Al_xGa_As Multilayer Reflector for Surface Emitting Laser Diode
- Si/Ge/Si Monolayer Heterostructure on Si(100) Studied by Surface-Sensitive EXAFS
- Valence Study of Orthorhombic and Tetragonal Ba_2YCu_3O_y : The Role of Oxygen Vacancies in High-T_c Superconductivity
- Local Structure in Orthorhombie and Tetragonal Ba_2YCu_3O_ : The Role of Oxygen Vacancies for High T_c Superconductivity
- Short Range Order in High T_c Superconductors Ba_xY_CuO_ and Sr_xLa_CuO_
- Valence and Coordination of Cu Ions in High T_c Superconductor Ba_xY_CuO_
- X-Ray Absorption Spectra of High T_c Superconducting Sr_xLa_CuO_
- Investigation of Ultrafast Carrier Dynamics in Quantum Wire by Terahertz Time-Domain Spectroscopy
- Femtosecond Pump-Probe Spectroscopy of GaAs Crescent Quantum Wires
- Excitation Wavelength Dependence of Terahertz Electromagnetic Wave Generation from Quantum Wire
- Ultrafast Coherent Control of Excitons and Exciton-Polaritons in Quantum Nanostructure
- Ultrafast Coherent Control of Excitons in Quantum Nano-Structures
- Spectral Characteristics of Vertically Stacked Etched Multiple-Quantum-Wire Lasers Fabricated by Flow Rate Modulation Epitaxy
- V-groove AlGaAs/GaAs multilayers grown on patterned GaAs substrates with submicron gratings
- V-groove AlGaAs/GaAs multilayers grown on patterned GaAs substrates with submicron gratings
- Evaluation of Multilayer Structure and Depth Profile by PAS Using a Transparent Transducer : Photoacoustic Spectroscopy
- Evaluation of Ion Implantation into Silicon Photoacoustic Spectroscopy using Transparent Transducer Method : Photoacoustic Spectroscopy
- Proposal of a New Self-Limited Growth and Its Application to the Fabrication of Atomically Uniform Quantum Nanostructures
- Electron Spin Relaxation in GaAs/AlGaAs Quantum Wires Analyzed by Transient Photoluminescence
- Phase-Locked Epitaxy Using RHEED Intensity Oscillation
- Target for a Pb(Zr,Ti)O_3 Thin Film Deposited at a Low Temperature Using a Quasi-Metallic Mode of Reactive Sputtering
- Electric Field Effect on Subband State Transitions Peaks in the Photoluminescence from a GaAlAs Quantum Well Structure
- Selective Coordination Epilaxy of Transition Metal Coordination Compounds III. : Evidence of Epitaxial Growth by Buerger Precession Method
- Approach to Superlattice of Transition Metal Coordination Compounds by Selective Coordinating Epitaxy
- Selective Coordination Epitaxial Growth of Quasi-One-Dimensional Transition Metal Coordination Compounds
- Two-Dimensional Electron Gas in an n^+-GaAs/Undoped AlGaAs/Undoped GaAs SIS Structure
- Transverse Mode Characteristics of a DBR-Surface Emitting Laser with Buried Heterostructure
- Electron Emission from a Diamond (111) p-i-n^+ Junction Diode with Negative Electron Affinity during Room Temperature Operation
- Strong Excitonic Emission from (001)-Oriented Diamond P-N Junction
- Contact Hole Etch Scaling toward 0.1 μm
- Spatial and Temporal Behavior of Radicals in Inductively Coupled Plasm for SiO_2 Etching
- Fundamental Characteristic of Capillary-Type Cluster Ion Source and Its Application for Selective Deposition of Aluminum Film : Etching and Deposition Technology
- Fundamental Characteristics of Capillary-Type Cluster Ion Source and Its Application for Selective Deposition of Aluminum Film
- MOCVD Growth and Characterization of (Al_xGa_)_yIn_P/GaAs
- A New AsH_3 Cracking Method for the MOCVD Growth of InGaAs
- InP MESFET Grown by MOCVD
- Y-Branch Buried Heterostructure(BH) Laser by In-Situ Etching and Regrowth Process
- Gate-Length Dependence of Negative Differential Resistance in InGaAs/InAlAs Quantum Well Field-Effect Transistor
- Method to Determine the Effective Group Refractive Index of an Optical Waveguide Using a Steplike Optical Frequency Sweep Generator
- Scanning Optical Fiber Microscope for High Resolution Laser Beam Induced Current Image Observation of Semiconductor Defects
- Electrical and Photo-Iuminescence Properties of ZnSe Thin Films Grown by Molecular Beam Epitaxy: Substrate Temperature Effect
- Fabrication of Quantum Wire and Minute Buried Heterostructure by In Situ Etching and Selective MOCVD Growth
- Phosphorus Acceptor Levels in ZnSe Grown by Molecular Beam Epitaxy
- Photoluminescence Properties of ZnSe Thin Films Grown by Molecular Beam Epitaxy
- Growth Rate and Sticking Coefficient of ZnSe and ZnTe Grown by Molecular Beam Epitaxy
- Molecular Beam Epitaxy of ZnTe Single Crystal Thin Films
- Energy Relaxation Process in n-Type InSb under Strong Longitudinal Magnetic Fields
- Propose of New Mixture Target for Low Temperature and High Rate Deposition of PZT Thin Films by Reactive Sputtering
- Surface Lattice Strain Relaxation at the Initial Stage of Heteroepitaxial Growth of In_xGa_As on GaAs by Molecular Beam Epitaxy
- Reflection High-Energy Electron Diffraction Oscillations During Molecular Beam Epitaxial Growth of ZnSe on (001)GaAs
- Electrical Properties of Low-Temperature (45O℃) Pb(Zr, Ti)O_3 Films Prepared in Quasi-Metallic Mode by RF Reactive Sputtering
- Analysis of Sputter Process on a New ZrTi+PbO Target System and Its Application to Low-Temperature Deposition of Ferroelectric Pb(Zr, Ti)O_3 Films
- Low-Temperature Fabrication of Pb(Zr, Ti)O_3 Films by RF Reactive Sputtering Using Zr/Ti+PbO Target
- Study on Differential Photothermal Deflection Spectroscopy (PDS) Considering the Intensity Profile of a Probe Beam
- Dynamic Reflection High-Energy Electron Diffraction Observations of the Atomic Layer Epitaxy Growth of Zn Chaleogenides
- The Effect of Lattice Misfit on Lattice Parameters and Photoluminescence Properties of Atomic Layer Epitaxy Grown ZnSe on (100)GaAs Substrates
- Maskless Selective Growth Method for pn Junction Applications on (001)-Oriented Diamond (SELECTED TOPICS IN APPLIED PHYSICS : Diamond Semiconductors : from Materials to Devices)
- High-Voltage Vacuum Switch with a Diamond p--i--n Diode Using Negative Electron Affinity
- Maskless Selective Growth Method for p--n Junction Applications on (001)-Oriented Diamond
- Surface Processes in ALE and MBE Growth of ZnSe: Correlation of RHEED Intensity Variation with Surface Coverage