InP MESFET Grown by MOCVD

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Studies on the structure of crescent-shaped GaAs quantum wires by combination of electron microscopy and photoluminescence spectroscopy
Proposal of a New Self-Limited Growth and Its Application to the Fabrication of Atomically Uniform Quantum Nanostructures
Electron States in Crescent GaAs Coupled Quantum-Wires
Fabrication of Quantum Wire and Minute Buried Heterostructure by In Situ Etching and Selective MOCVD Growth
Selective Growth of Buried n^+ Diamond on (001) Phosphorus-Doped n-Type Diamond Film
Nanometer Scale Height Standard Using Atomically Controlled Diamond Surface
Exciton-derived Electron Emission from (001) Diamond p-n Junction Diodes with Negative Electron Affinity
High-Efficiency Excitonic Emission with Deep-Ultraviolet Light from (001)-Oriented Diamond p-i-n Junction
n-Type Control by Sulfur Ion Implantation in Homoepitaxial Diamond Films Grown by Chemical Vapor Deposition
Distributed Feed Back Surface Emitting Laser Diode with Multilayered Heterostructure
GaAs/Al_xGa_As Multilayer Reflector for Surface Emitting Laser Diode
Investigation of Ultrafast Carrier Dynamics in Quantum Wire by Terahertz Time-Domain Spectroscopy
Femtosecond Pump-Probe Spectroscopy of GaAs Crescent Quantum Wires
Excitation Wavelength Dependence of Terahertz Electromagnetic Wave Generation from Quantum Wire
Ultrafast Coherent Control of Excitons and Exciton-Polaritons in Quantum Nanostructure
Ultrafast Coherent Control of Excitons in Quantum Nano-Structures
Raman Scattering of InGaAsP Lattice-Matched to GaAs in the Region of Immiseibility
Electron Emission from a Diamond (111) p-i-n^+ Junction Diode with Negative Electron Affinity during Room Temperature Operation
Strong Excitonic Emission from (001)-Oriented Diamond P-N Junction
Contact Hole Etch Scaling toward 0.1 μm
Spatial and Temporal Behavior of Radicals in Inductively Coupled Plasm for SiO_2 Etching
Fundamental Characteristic of Capillary-Type Cluster Ion Source and Its Application for Selective Deposition of Aluminum Film : Etching and Deposition Technology
Fundamental Characteristics of Capillary-Type Cluster Ion Source and Its Application for Selective Deposition of Aluminum Film
MOCVD Growth and Characterization of (Al_xGa_)_yIn_P/GaAs
A New AsH_3 Cracking Method for the MOCVD Growth of InGaAs
InP MESFET Grown by MOCVD
A Study of Deep Levels in MOCVD-Grown InP/Semi-Insulationg InP Structure
Deep Levels in InP Grown by MOCVD
CW Laser Annealing of Polycrystalline Silicon on SiO_2 and Effects of Successive Furnace Annealing
Auto-Doping Phenomena for the InGaAsP Active Layer in DH Structure Grown by LPE
The Concentration Profiles of Phosphorus, Arsenic and Recoiled Oxygen Atoms in Si by Ion Implantation into SiO_2-Si
Raman Intensity of Phonon Modes in InGaAsP Quaternary Alloys Grown on (100) InP in the Region of Immiscibility
Raman Scattering Study of InGaAsP Quaternary Alloys Grown on InP in the Immiscible Region
A 1.3 μm InGaAsP/InP Multiquantum Well Laser Grown by LPE
Maskless Selective Growth Method for pn Junction Applications on (001)-Oriented Diamond (SELECTED TOPICS IN APPLIED PHYSICS : Diamond Semiconductors : from Materials to Devices)
High-Voltage Vacuum Switch with a Diamond p--i--n Diode Using Negative Electron Affinity
Maskless Selective Growth Method for p--n Junction Applications on (001)-Oriented Diamond

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