Raman Intensity of Phonon Modes in InGaAsP Quaternary Alloys Grown on (100) InP in the Region of Immiscibility
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概要
- 論文の詳細を見る
The Raman intensities of optical phonon modes in In_xGa_<1-x>AS_yP_<1-y> quaternary alloys lattice matched to (100) InP are studied in the compositional region of immiscibility. The peak intensity as well as the integral intensity of each phonon modes are investigated in terms of the relative density of corresponding bonds. It was found that the integral intensity is well interpreted in terms of the bond density. The replacement of a gallium atom with an indium atom produces a remarkable variation in the peak intensity.
- 社団法人応用物理学会の論文
- 1999-02-28
著者
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Sawaki N
Nagoya Univ. Nagoya Jpn
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SUGIURA Touko
Department of Electrical Engineering, Toyota College of Technology
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HASE Nobuyasu
Department of Electrical Engineering, Toyota College of Technology
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Sawaki Nobuhiko
Department Of Electronics Faculty Of Engineering Nagoya University
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Iguchi Yasuhiro
Optoelectronic Industry And Technology Development Association (oitda)
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Sugiura T
Department Of Electrical Engineering Toyota College Of Technology
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Hase N
Department Of Electrical Engineering Toyota College Of Technology
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Iguchi Y
Sumitomo Electric Ind. Ltd. Osaka Jpn
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Sawaki Nobuhiko
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan
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SAWAKI Nobuhiko
Department of Electronics, Nagoya University
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