Formation Mechanism of AlGaAs/GaAs Stripe Structure Made of ($11n$)A Facets in Selective Molecular-Beam Epitaxy
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概要
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The evolution of the shape of a stripe mesa during molecular-beam epitaxy of GaAs is studied under different growth conditions (e.g., growth temperature, As pressure). If the stripe mesa is along the $\langle 1\bar{1}0\rangle$ axis on a (001) GaAs substrate, {$11n$}A facets ($n=1$, 3, 4, 5) are formed. We found that {111}A and {113}A predominate if the stripe width is less than 1.5 μm. If the stripe width is wider than 2.0 μm, however, we have a shallow groove made of {115}A facets on the top of the mesa. Thus, the cross-sectional shape (appearance/disappearance of each facet) depends on the growth time. The overall evolution is well explained numerically assuming diffusion of adatoms on the facets. We found that the mass transport is the dominant mechanism to determine the cross-sectional shape of the stripe. Slight discrepancy between the experimental and numerical results is attributed to the presence of a potential barrier for the diffusion across the boundary between different facets.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-07-25
著者
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Sawaki Nobuhiko
Department Of Electronics Faculty Of Engineering Nagoya University
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Yamaguchi Masahito
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Nishiwaki Tatsuya
Department of Electronics, Nagoya University, C3-1-631 Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Sawaki Nobuhiko
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan
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YAMAGUCHI Masahito
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University
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