Growth of GaN on Si(111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer
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概要
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GaN films were successfully grown on Si(111) substrates using a reactive-sputter-deposited AlN intermediate layer (sp-AlN) at 350 °C. Uniform GaN growth was obtained with the pre sputtering of a thin Al film before the deposition of sp-AlN. Atomic force microscopy (AFM) measurements revealed that the density of pits originating from the ends of mixed/screw-type dislocations is about 10^{9} cm<sup>-2</sup>, which is much lower than that of GaN grown on a metalorganic vapor phase epitaxy (MOVPE) deposited AlN intermediate layer. The decrease in the pit density might have originated from the small number of initial nuclei of GaN.
- 2013-08-25
著者
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Amano Hiroshi
Department of Cardiology and Pneumology, Dokkyo University School of Medicine
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HONDA Yoshio
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University
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Tanikawa Tomoyuki
Department of Electronics and Akaaki Research Center, Nagoya University, Nagoya 464-8603, Japan
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YAMAGUCHI Masahito
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University
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Yamada Takaya
Department of Electrical Engineering and Computer Science, Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan
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Honda Yoshio
Department of Chemistry, Faculty of Science, Kanazawa University
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Tanikawa Tomoyuki
Department of Electrical Engineering and Computer Science, Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan
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