Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
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概要
- 論文の詳細を見る
Recent development of technology and understanding of the growth mechanism in heteroepitaxial growth of nitrides on highly-mismatched substrates have enabled us to grow high-quality GaN, AlGaN, GaInN and their quantum well structures. Conductivity control of both n-type and p-type nitrides has also been achieved. These achievements have led to the commercialization of high-brightness blue, green and white light-emitting diodes and to the realization of short wavelength laser diodes and high-speed transistors based on nitrides. The performance of these devices is still progressing, but still requires advances in many areas of materials science and device fabrication.
- 社団法人応用物理学会の論文
- 1997-09-15
著者
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Amano Hiroshi
Department of Cardiology and Pneumology, Dokkyo University School of Medicine
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Akasaki Isamu
Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University
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AKASAKI Isamu
Department of Electrical and Electronic Engineering, Meijo University
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AMANO Hiroshi
Department of Electrical and Electronic Engineering, Meijo University
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