Relaxation Process of the Thermal Strain in the GaN/α-Al_2O_3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain

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概要

• 論文の詳細を見る
• 1992-10-15

著者

• Hiramatsu Kazumasa

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University

• Itoh Kikuo

  Faculty Of General Education Kumamoto University

• Akasaki Isamu

  Department Of Electrical And Electronic Engineering Meijyo University

• Akasaki Isamu

  Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University

• ITOH Kenji

  Department of Applied Chemistry, Graduate School of Engineering, Nagoya University

• Itoh K

  Discrete Device Division Semiconductor Co. Matsushita Electric Industrial Co. Ltd.

• DETCHPROHM Theeradetch

  Department of Electrical and Electronic Engineering, Meijo University

• Hiramatsu K

  Department Of Electrical And Electronic Engineering. Faculty Of Engineering Mie University

• Hiramatsu Kazumasa

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• Detchprohm T

  High-tech Research Center Meljo University

• Itoh Kenji

  Department of Applied Chemistry and Department of Synthetic Chemistry, Faculty of Engineering, Nagoya University

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