120 mW High-Power Low-Noise GaAlAs Multiple-Quantum-Well Laser Diodes with a New Real Refractive Index Guided Self-Aligned Structure
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-04-15
著者
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Yoshikawa Akira
Ntt Lsi Laboratories
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Itoh Kikuo
Faculty Of General Education Kumamoto University
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YOSHIKAWA Akihiko
Department of Electronics and Mechanical Engineering, Chiba University
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Itoh Kimitaka
Plasma Physics Laboratory Kyoto University
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HASHIMOTO Tatsunori
Department of Electronics, Kyushu University
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Takayama Tomoo
Department Of Metallurgy Kyoto University
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Hashimoto T
Department Of Chemistry For Materials Faculty Of Engineering Mie University
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Itoh K
Discrete Device Division Semiconductor Co. Matsushita Electric Industrial Co. Ltd.
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IMAFUJI Osamu
Electronics Research Laboratory, Matsushita Electronics Corporation
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TAKAYAMA Toru
Electronics Research Laboratory, Matsushita Electronics Corporation
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YURI Masaaki
Electronics Research Laboratory, Matsushita Electronics Corporation
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YOSHIKAWA Akio
Electronics Research Laboratory, Matsushita Electronics Corporation
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ITOH Kunio
Electronics Research Laboratory, Matsushita Electronics Corporation
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HASHIMOTO Tadaro
Electronics Research Laboratory, Matsushita Electronics Corporation
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Yuri M
Semiconductor Devices Research Center Semiconductor Co. Matsushita Electric Industrial Co. Ltd.
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Imafuji O
Semiconductor Co. Kyoto Jpn
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Takayama Toru
Solid State Electronics Laboratory Sis-x329 Stnford University:semiconductor Devicr Research Center
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Hashimoto Tadanori
Department Of Chemistry For Materials Faculty Of Engineering Mie University
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Yoshikawa A
Chiba Univ. Chiba Jpn
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