Growth of Polycrystalline CdS Films by Low-Pressure Metalorganic Chemical Vapor Deposition
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概要
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Polycrystalline CdS films were grown at temperatures between 50 and 400℃ by reacting DMCd and H_2S, and the electrical and optical properties of the films were examined. It was found that the films show a preferential orientation to (0001) direction and that their electrical properties are remarkably influenced by the sulphur vacancy. The resistivity of undoped films ranged from 10^3 to 10^7 Ω・cm and became maximum at about 250-300℃. Furthermore, the resistivity of the films could be successfully reduced to about 10^<-1> Ω・cm by doping Al as a donor impurity.
- 社団法人応用物理学会の論文
- 1987-07-20
著者
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YOSHIKAWA Akihiko
Department of Electronics and Mechanical Engineering, Chiba University
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Yoshikawa Akihiko
Department Of Electrical And Electronics Engineering Chiba University
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YAMAGA Shigeki
Department of Electrical and Electronics Engineering, Chiba University
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KASAI Haruo
Department of Electrical and Electronics Engineering, Chiba University
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Yamaga Shigeki
Department Of Electrical And Electronics Engineering Chiba University
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