A Computer Analysis of CdS-InP Heteroface Solar Cells : III-3: III-V COMPOUND SOLAR CELLS
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1980-06-01
著者
-
YOSHIKAWA Akihiko
Department of Electronics and Mechanical Engineering, Chiba University
-
Yoshikawa Akihiko
Department Of Electrical And Electronics Engineering Chiba University
-
YAMAGA Shigeki
Department of Electrical and Electronics Engineering, Chiba University
-
KASAI Haruo
Department of Electrical and Electronics Engineering, Chiba University
-
Yamaga Shigeki
Department Of Electrical And Electronics Engineering Chiba University
-
NISHIMAKI Masao
Department of Electronic Engineering, Chiba University
-
Nishimaki Masao
Department Of Electronic Engineering Chiba University
関連論文
- Growth and Characterization of AlInN Ternary Alloys in Whole Composition Range and Fabrication of InN/AlInN Multiple Quantum Wells by RF Molecular Beam Epitaxy
- Acceptor Concentration Control of P-ZnSe Using Nitrogen and Helium Mixed Gas Plasma
- Planar-Doping of Molecular Beam Epitaxy Grown ZnSe with Plasma-Excited Nitrogen
- Nitrogen Doping of ZnSe and ZnCdSe with the Assistance of Thermal Energy and Photon Energy
- Ar Ion Laser-Assisted MOVPE of ZnSe Using DMZn and DMSe as Reactants
- Effects of Substrate Materials and Their Properties on Photoassisted Metalorganic Vapor Phase Epitaxy of ZnSe
- Basic Analysis on SAR Distribution of Coaxial-Slot Antenna Array for Interstitial Microwave Hyperthermia
- A New Muscle-Equivalent Phantom for SAR Estimation
- Effect of a Catheter on SAR Distribution Around Interstitial Antenna for Microwave Hyperthermia
- Effect of Precise Control of V/III Ratio on In-Rich InGaN Epitaxial Growth
- Citric Acid Etching of ZnSe Surface and Application to the Homoepitaxy by Molecular Beam Epitaxy
- Atomically Flat GaAs(001) Surfaces Obtained by High-Temperature Treatment with Atomic Hydrogen Irradiation
- Reduction of Beam Divergence Angle by Low-Refractive-Index Layers Introduced to Real-Refractive-Index-Guided GaAlAs High-Power Laser Diodes
- 120 mW High-Power Low-Noise GaAlAs Multiple-Quantum-Well Laser Diodes with a New Real Refractive Index Guided Self-Aligned Structure
- Electrical and Photoluminescence Properties of Iodine-Doped ZnSe Films Grown by Low-Pressure MOVPE : Semiconductors and Semiconductor Devices
- Photoluminescence Properties of Nitrogen-Doped ZnSe Films Grown by Low-Pressure MOVPE : Semiconductors and Semiconductor Devices
- Photoluminescence Properties of Li-Doped ZnSe Films Grown by Metalorganic Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
- Epitaxial CdS Films for Transparent Electrode
- Optical Properties of Hetero-Epitaxial CdS Films
- Growth of Polycrystalline CdS Films by Low-Pressure Metalorganic Chemical Vapor Deposition
- Growth Mechanism of ZnS and ZnSe Films in Low-Pressure MOCVD
- Effects of |H_2Se|/|DMZn| Molar Ratio on Epitaxial ZnSe Films Grown by Low-Pressure MOCVD
- Growth of High-Quality ZnSe Films by Low-Pressure Metalorganic Chemical Vapor Deposition
- New and Simple MOCVD Technique Using Completely Gaseous MO-Sources Especially Useful for Growing Zn-Chalcogenide Films
- Growth and Evaluation of n-CdS/n-Inp/p-Inp Heteroface Solar Cell : II-2: COMPOUND SEMICONDUCTOR SOLAR CELLS (II)
- Analysis of External Conversion Efficiency of Heteroface Solar Cell with Ultrathin Window Layer
- A Computer Analysis of CdS-InP Heteroface Solar Cells : III-3: III-V COMPOUND SOLAR CELLS
- Growth of Hydrogenated Amorphous Silicon Films by ArF Excimer Laser Photodissociation of Disilane
- Epitaxial ZnS MπS Blue Light Emitting Diode Fabricated on n^+-GaAs by Low-Pressure Metalorganic Vapor Phase Epitaxy
- Autodoping Effects near the Interface of CdS-GaAs Junction
- Electrical and Photovoltaic Properties of CdS-GaAs Junctions
- Injection Electroluminescence in n-CdS/p-InP Heterojunctions
- Growth of Lattice-Matched ZnSe-ZnS Superlattices onto GaAs Substrates by Metalorganic Molecular Beam Epitaxy
- Theoretical Design of 460 nm ZnCdSSe Laser Diodes
- Study on the Reduction of Reflection Losses in CdS/InP Solar Cells
- Ag(111)表面上の水素分子のオルソ・パラ転換におけるファン・デル・ワールス力の影響
- First Principles Calculations of 1-methoxymethyl-1-methylpyrrolidinium and 1-ethyl-3-methylimidazolium Adsorption on Graphene
- 計算機マテリアルデザイン : 新規自動車触媒の知的材料設計
- 25aCL-7 固体表面近傍でのミューオンの非局在効果(25aCL X線・粒子線(ミュオン),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
- 25aPS-13 第一原理計算に基づくペロブスカイト型酸化物の強誘電性と構造相転移に関する研究(25aPS 領域10ポスターセッション(誘電体),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
- Step-Flow Growth of In-Polar InN by Molecular Beam Epitaxy
- 20pAG-6 金属表面近傍におけるミューオン・水素のパンド構造と荷電状態(20aAG X線・粒子線(ミュオン),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
- 18pPSA-66 ペロブスカイト型酸化物の強誘電性に対する元素置換の影響(18pPSA 領域10ポスターセッション(誘電体),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
- 18pFN-8 銀表面上吸着酸素の強磁性状態の安定性(18pFN 表面界面ダイナミクス,領域9(表面・界面,結晶成長))
- 18aFN-7 Co/Ni多層膜における積層過程の磁区パターン形成(18aFN 領域9,領域3合同 表面磁性,領域3(磁性,磁気共鳴))
- 18aFN-7 Co/Ni多層膜における積層過程の磁区パターン形成(18aFN 領域9,領域3合同 表面磁性,領域9(表面・界面,結晶成長))
- 20pPSA-64 W(110)基板上におけるCo/Niマルチレイヤーにおける磁気異方性の理論的研究(20pPSA 領域9 ポスターセッション,領域9(表面・界面,結晶成長)
- 28pXK-8 銀表面上での水素分子の吸着状態と仕事関数に関する理論的研究(28pXK 表面界面電子物性・金属,領域9(表面・界面,結晶成長))
- 26aPS-126 薄膜化によるペロブスカイト型酸化物の強誘電性の変化(26aPS 領域10ポスターセッション(誘電体),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
- 26pPSA-46 Al(111)表面上での酸素分子の解離吸着反応における表面サイト及び分子配向依存性(26pPSA 領域9ポスターセッション,領域9(表面・界面,結晶成長))
- 26pPSA-27 W(110)上におけるCo/Ni多重層の構造と磁気特性の関係に関する理論的研究(26pPSA 領域9ポスターセッション,領域9(表面・界面,結晶成長))
- 28aPS-8 Co/Ni多層膜における積層過程の磁区パターン形成シミュレーション(領域11ポスターセッション,領域11(統計力学,物性基礎論,応用数学,力学,流体物理))
- 27aKA-9 炭素およびケイ素等共有結合性結晶におけるミュオンの量子状態(格子欠陥・ナノ構造(炭素系・金属・水素),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
- 28aJA-10 分子性架橋と金属電極との接合界面のデザイン(ナノチューブ・ナノワイヤ,領域9(表面・界面,結晶成長))
- 27pPSA-35 Ca/Ni多重層の積層過程における磁気特性の変化に関する理論的研究(領域9ポスターセッション,領域9(表面・界面,結晶成長))
- JPSJの最近の注目論文から : 10月の編集委員会より