Theoretical Design of 460 nm ZnCdSSe Laser Diodes
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概要
- 論文の詳細を見る
Theoretical design of ZnSSe/ZnCdSSe laser diodes emitting 460 nm at room temperature (RT) was studied by means of threshold current analysis. The threshold currernt density calculation was based on the laser theory established for the III-V laser diode (LD) system. The result of the threshold current density calculation indicated that the reduction of carrier overflow is an essential issue in realizing the device with a reasonable threshold current level at RT. Another indication is that 30% S content in the ZnSSe cladding layer would be a suitable target value for a practical 460 nm LD at RT, along with a multiple quantum barrier structure. The predicted threshold current density of such a LD could be as low as 450 A/cm^2 at RT.
- 社団法人応用物理学会の論文
- 1995-04-15
著者
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Kobayashi Masakazu
Departmdepartment Of Cardiology Nagoya University Graduate School Of Medicine
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Yoshikawa Akihiko
Department Of Electrical And Electronics Engineering Chiba University
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Takahashi Masashi
Department Of Chemistry Faculty Of Science Toho University
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Imajuku Wataru
Department Of Electrical And Electronics Engineering Chiba University
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Takahashi M
Nippon Dental Univ. Junior Coll. At Niigata
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Takahashi Masashi
Department Of Animal And Grassland Research National Agricultural Center For Kyushu Okinawa Region
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