Growth of Hydrogenated Amorphous Silicon Films by ArF Excimer Laser Photodissociation of Disilane
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概要
- 論文の詳細を見る
Hydrogenated amorphous silicon films have been grown on glass substrates by photodissociation of disilane using a the ArF excimer laser foe the first time. Electrical and optical properties of the films have been examined. It was found that the magnitude of the gap energy of laser CVD films is rather large as compared to that of films obtained by a conventional plasma CVD. Preliminary examinations to control the conductivity by impurity doping have also been performed.
- 社団法人応用物理学会の論文
- 1984-02-20
著者
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YOSHIKAWA Akihiko
Department of Electronics and Mechanical Engineering, Chiba University
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Yoshikawa Akihiko
Department Of Electrical And Electronics Engineering Chiba University
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Yoshikawa Akihiko
Department Of Electronic Engineering Chiba University
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YAMAGA Shigeki
Department of Electrical and Electronics Engineering, Chiba University
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Yamaga Shigeki
Department Of Electrical And Electronics Engineering Chiba University
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Yamaga Shigeki
Department Of Electronic Engineering Chiba University
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YOSHIKAWA Akihiko
Department of Electronic Engineering, Chiba University
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