Step-Flow Growth of In-Polar InN by Molecular Beam Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
The step-flow mode growth of an In-polar InN epilayer on a GaN template was achieved by molecular beam epitaxy. A uniform terrace structure was observed with a step height of one monolayer. The surface rms roughness was less than 1 nm over a $10\times10$ μm2 area. To obtain the step-flow mode growth, it was preferable to use a slightly In-rich growth condition in the In-polarity growth regime, a GaN template of low dislocation density, and a high epitaxial temperature. A typical electron concentration of bulk InN was $5--6\times10^{17}$ cm-3 with a Hall mobility of 1400 cm2/(V s).
- Japan Society of Applied Physicsの論文
- 2006-07-25
著者
-
Yoshikawa Akihiko
Department Of Electrical And Electronics Engineering Chiba University
-
Wang Xinqiang
Department Of Electronic Engineering State Key Laboratory On Integrated Optoelectronics Jilin Univer
-
Che Song-bek
Department Of Electrical And Electronic Engineering Sophia University
-
Ishitani Yoshihiro
Department Of Electronics And Mechanical Engineering Chiba University
-
Ishitani Yoshihiro
Department of Electronics and Mechanical Engineering, Center for Frontier Electronics and Photonics, and InN-Project as a CREST program of JST, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
-
Wang Xinqiang
Department of Electronics and Mechanical Engineering, Center for Frontier Electronics and Photonics, and InN-Project as a CREST program of JST, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
-
Che Song-Bek
Department of Electronics and Mechanical Engineering, Center for Frontier Electronics and Photonics, and InN-Project as a CREST program of JST, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
関連論文
- Growth and Characterization of AlInN Ternary Alloys in Whole Composition Range and Fabrication of InN/AlInN Multiple Quantum Wells by RF Molecular Beam Epitaxy
- Acceptor Concentration Control of P-ZnSe Using Nitrogen and Helium Mixed Gas Plasma
- Planar-Doping of Molecular Beam Epitaxy Grown ZnSe with Plasma-Excited Nitrogen
- Nitrogen Doping of ZnSe and ZnCdSe with the Assistance of Thermal Energy and Photon Energy
- Ar Ion Laser-Assisted MOVPE of ZnSe Using DMZn and DMSe as Reactants
- Effects of Substrate Materials and Their Properties on Photoassisted Metalorganic Vapor Phase Epitaxy of ZnSe
- Effect of Precise Control of V/III Ratio on In-Rich InGaN Epitaxial Growth
- Citric Acid Etching of ZnSe Surface and Application to the Homoepitaxy by Molecular Beam Epitaxy
- Atomically Flat GaAs(001) Surfaces Obtained by High-Temperature Treatment with Atomic Hydrogen Irradiation
- Electrical and Photoluminescence Properties of Iodine-Doped ZnSe Films Grown by Low-Pressure MOVPE : Semiconductors and Semiconductor Devices
- Photoluminescence Properties of Nitrogen-Doped ZnSe Films Grown by Low-Pressure MOVPE : Semiconductors and Semiconductor Devices
- Photoluminescence Properties of Li-Doped ZnSe Films Grown by Metalorganic Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
- Growth and Characterization of ZnCdSe/BeZnTeII-VI Compound Type-II Superlattices on InP Substrates and Their Application for Visible Light Emitting Devices : Semiconductors
- Growth and Characterization of Nitrogen-Doped MgSe/ZnSeTe Superlattice Quasi-Quaternary Oil InP Substrates and Fabrication of Light Emitting Diodes
- Crystal Growth and Characterization of II-VI Compound Light Emitting Diodes with Novel Superlattice Quasi-Quaternary Cladding Layers on InP Substrates
- Epitaxial CdS Films for Transparent Electrode
- Molecular Beam Epitaxy Growth of Single-Domain and High-Quality ZnO Layers on Nitrided (0001) Sapphire Surface
- Optical Properties of Hetero-Epitaxial CdS Films
- Ordering InAs Quantum Dots Formation on GaAS/InP by Low Pressure Metal-Organic Chemical Vapor Deposition : Semiconductors
- Temperature Dependence of Excitonic $\Gamma_{\text{c}}$–$\Gamma_{\text{v}}$ Transition Energies of GaxIn1-xP Crystals
- Growth of Polycrystalline CdS Films by Low-Pressure Metalorganic Chemical Vapor Deposition
- Growth Mechanism of ZnS and ZnSe Films in Low-Pressure MOCVD
- Effects of |H_2Se|/|DMZn| Molar Ratio on Epitaxial ZnSe Films Grown by Low-Pressure MOCVD
- Growth of High-Quality ZnSe Films by Low-Pressure Metalorganic Chemical Vapor Deposition
- New and Simple MOCVD Technique Using Completely Gaseous MO-Sources Especially Useful for Growing Zn-Chalcogenide Films
- Growth and Evaluation of n-CdS/n-Inp/p-Inp Heteroface Solar Cell : II-2: COMPOUND SEMICONDUCTOR SOLAR CELLS (II)
- Analysis of External Conversion Efficiency of Heteroface Solar Cell with Ultrathin Window Layer
- A Computer Analysis of CdS-InP Heteroface Solar Cells : III-3: III-V COMPOUND SOLAR CELLS
- Growth of Hydrogenated Amorphous Silicon Films by ArF Excimer Laser Photodissociation of Disilane
- Autodoping Effects near the Interface of CdS-GaAs Junction
- Electrical and Photovoltaic Properties of CdS-GaAs Junctions
- Injection Electroluminescence in n-CdS/p-InP Heterojunctions
- Growth of Lattice-Matched ZnSe-ZnS Superlattices onto GaAs Substrates by Metalorganic Molecular Beam Epitaxy
- Theoretical Design of 460 nm ZnCdSSe Laser Diodes
- Study on the Reduction of Reflection Losses in CdS/InP Solar Cells
- Effect of Low Temperature Thin GaN Layer on ZnO Film Grown on Nitridated c-Sapphire by Molecular Beam Epitaxy
- Step-Flow Growth of In-Polar InN by Molecular Beam Epitaxy
- Molecular Beam Epitaxy Growth of Single-Domain and High-Quality ZnO Layers on Nitrided (0001) Sapphire Surface