Effect of Low Temperature Thin GaN Layer on ZnO Film Grown on Nitridated c-Sapphire by Molecular Beam Epitaxy

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概要

• 論文の詳細を見る

• A low-temperature thin GaN layer was used to wet the grown ZnO buffer layer effectively in the epitaxy of a ZnO film on a nitridated c-sapphire substrate by plasma-assisted molecular beam epitaxy. An atomically smooth Zn-polar ZnO epilayer was achieved with an rms roughness of 0.13 nm in a $3\,\micron \times 3\,\micron$ scanned area. Triangular terraces with monolayer steps (0.26 nm) were observed by atomic force microscope. The crystalline quality of the ZnO epilayer was also improved with the full width at half maximum (FWHM) values for (002) and (102) $\omega$-scans of 41 arcsec and 378 arcsec, respectively.

• Japan Society of Applied Physicsの論文
• 2004-06-01

著者

• Yoshikawa Akihiko

  Center For Frontier Electronics And Photonics Chiba University

• Wang Xinqiang

  Center For Frontier Electronics And Photonics Chiba University

• Ishitani Yoshihiro

  Department Of Electronics And Mechanical Engineering Chiba University

• Yoshikawa Akihiko

  Center for Frontier Electronics and Photonics, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan

• Tomita Yosuke

  Department of Electronics and Mechanical Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan

• Roh Ok-hwan

  Department of Electronics and Mechanical Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan

• Ishitani Yoshihiro

  Department of Electronics and Mechanical Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan

• Wang Xinqiang

  Center for Frontier Electronics and Photonics, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan

関連論文

• Growth and Characterization of AlInN Ternary Alloys in Whole Composition Range and Fabrication of InN/AlInN Multiple Quantum Wells by RF Molecular Beam Epitaxy
• Effect of Precise Control of V/III Ratio on In-Rich InGaN Epitaxial Growth
• Molecular Beam Epitaxy Growth of Single-Domain and High-Quality ZnO Layers on Nitrided (0001) Sapphire Surface
• Temperature Dependence of Excitonic $\Gamma_{\text{c}}$–$\Gamma_{\text{v}}$ Transition Energies of GaxIn1-xP Crystals
• Effects of Sapphire (0001) Surface Modification by Gallium Pre-Exposure on the Growth of High-Quality Epitaxial ZnO Film
• Effect of Low Temperature Thin GaN Layer on ZnO Film Grown on Nitridated c-Sapphire by Molecular Beam Epitaxy
• Step-Flow Growth of In-Polar InN by Molecular Beam Epitaxy
• Molecular Beam Epitaxy Growth of Single-Domain and High-Quality ZnO Layers on Nitrided (0001) Sapphire Surface

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