Molecular Beam Epitaxy Growth of Single-Domain and High-Quality ZnO Layers on Nitrided (0001) Sapphire Surface
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概要
- 論文の詳細を見る
Nitridation of a (0001) sapphire substrate was used to eliminate the rotation domains and improve the quality of a ZnO film grown by rf-plasma-assisted molecular beam epitaxy. It was found that a very thin nitrogen polar AlN layer, which was formed by nitridation, acted as a template for the following growth of the ZnO film, resulting in the elimination of the rotation domains which were often observed in the case without nitridation. The full width at half maximum of (002) and (102) X-ray diffraction $\omega$-scans decreased from 912 and 2870 arcsec to 95 and 445 arcsec, respectively, due to the effect of sapphire nitridation. Based on this, its optical quality was also improved.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-02-01
著者
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Yoshikawa Akihiko
Center For Frontier Electronics And Photonics Chiba University
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Wang Xinqiang
Center For Frontier Electronics And Photonics Chiba University
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Murakami Masashi
Department Of Biochemistry Cancer Institute Okayama University Medical School
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Iwaki Hiroyuki
Department Of Applied Chemistry. Faculty Of Engineering Toyama University
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Du Xiaolong
Center For Frontier Electronics And Photonics Chiba University
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Ishitani Yoshihiro
Department Of Electronics And Mechanical Engineering Chiba University
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Iwaki Hiroyuki
Department of Electronics and Mechanical Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
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