Effects of Sapphire (0001) Surface Modification by Gallium Pre-Exposure on the Growth of High-Quality Epitaxial ZnO Film
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概要
- 論文の詳細を見る
ZnO films were grown on (0001) sapphire substrates using rf plasma-assisted molecular beam epitaxy. Distinct rotation domain structures were observed in ZnO films grown on Al-terminated or O-terminated sapphire surfaces. Therefore, the Ga pre-exposure process was adopted to modify the sapphire (0001) surface just before the buffer layer growth. It was revealed that the sapphire surface modification by Ga pre-exposure had significant effects on the elimination of the rotation domains in the ZnO epilayer. The full width at half maximum (FWHM) of the X-ray diffraction (XRD) rocking curve of the ZnO (002) reflection plane was as narrow as 67 arcsec. Consequently, a high-quality ZnO film with very good optical and electrical properties was obtained.
- 社団法人応用物理学会の論文
- 2002-10-01
著者
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Yoshikawa Akihiko
Center For Frontier Electronics And Photonics Chiba University
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Yoshikawa Akihiko
Center For Frontier Electronics And Photonics Chiba University:department Of Electronics And Mechani
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Murakami Masashi
Department Of Biochemistry Cancer Institute Okayama University Medical School
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Murakami Masashi
Department Of Electronics And Mechanical Engineering Chiba University
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Iwaki Hiroyuki
Department Of Electronics And Mechanical Engineering Chiba University
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Iwaki Hiroyuki
Department Of Applied Chemistry. Faculty Of Engineering Toyama University
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DU Xiaolong
Center for Frontier Electronics and Photonics, Chiba University
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Du Xiaolong
Center For Frontier Electronics And Photonics Chiba University
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ISHITANI Yoshihiro
Center for Frontier Electronics and Photonics, Chiba University
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Ishitani Yoshihiro
Center For Frontier Electronics And Photonics Chiba University:department Of Electronics And Mechani
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