Temperature Dependence of Excitonic $\Gamma_{\text{c}}$–$\Gamma_{\text{v}}$ Transition Energies of GaxIn1-xP Crystals

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概要

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• The excitonic $\Gamma_{\text{c}}$–$\Gamma_{\text{v}}$ transition energies of disordered GaxIn1-xP ($x=0.0$, 0.52, 0.70, and 1.0) crystals have been measured by photoreflectance (PR) measurements at temperatures from 20 to 300 K@. The photoluminescence (PL) peak energy at 20 K is found to be lower than the energy obtained from PR or photoluminescence excitation (PLE) spectra by about 6 meV@. The temperature dependence of the transition energy is expressed by a function consisting of several terms, each of which represents the effect of the volume-thermal expansion or the electron-phonon interaction. It is found that the temperature-dependent decrease of the transition energy from the pure electronic transition energy is mainly caused by the electron-phonon interaction. The energy shift due to the electron-phonon interaction increases as the GaP mole fraction increases.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-03-15

著者

• SHIRAKI Yasuhiro

  Research Center for Advanced Science and Technology (RCAST), The University of Tokyo

• ISHITANI Yoshihiro

  Department of Electronics and Mechanical Engineering, Chiba University

• YAGUCHI Hiroyuki

  Department of Applied Physics, The University of Tokyo

• Yaguchi H

  Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saita

• Yaguchi Hiroyuki

  Department Of Applied Physics The University Of Tokyo

• Shiraki Y

  Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol

• Ishitani Y

  Chiba Univ. Chiba Jpn

• Ishitani Yoshihiro

  Department Of Electronics And Mechanical Engineering Chiba University

• Shiraki Yasuhiro

  Research Center For Advanced Science And Technology (rcast) The University Of Tokyo

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