Characterization of Carrier Concentration and Mobility in n-type SiC Wafers Using Infrared Reflectance Spectroscopy
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概要
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We have estimated the free-carrier concentration and drift mobility in n-type 6H-SiC wafers in the carrier concentration range of $10^{17}$–$10^{19}$ cm-3 from far- and mid-infrared (30–2000 cm-1) reflectance spectra obtained at room temperature. A modified classical dielectric function model was employed for the analysis. We found good agreement between the electrical properties derived from infrared reflectance spectroscopy and those derived from Hall effect measurements. We have demonstrated the spatial mapping of carrier concentration and mobility for commercially produced 2 inch SiC wafers.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-08-15
著者
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Yoshida Sadafumi
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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Yaguchi Hiroyuki
Department Of Applied Physics The University Of Tokyo
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Nakashima Shinichi
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, AIST Tsukuba Central 2, 1-1-1 Umezono, Tsukuba-shi, Ibaraki 305-8568, Japan
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Hijikata Yasuto
Department of Electrical and Electronic Systems, Faculty of Engineering, Saitama University, 255 Shimo-Ohkubo, Sakura-ku, Saitama-shi, Saitama 338-8570, Japan
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Narita Katsutoshi
Department of Electrical and Electronic Systems, Faculty of Engineering, Saitama University, 255 Shimo-Ohkubo, Sakura-ku, Saitama-shi, Saitama 338-8570, Japan
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Yaguchi Hiroyuki
Department of Electrical and Electronic Systems, Faculty of Engineering, Saitama University, 255 Shimo-Ohkubo, Sakura-ku, Saitama-shi, Saitama 338-8570, Japan
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Yoshida Sadafumi
Department of Electrical and Electronic Systems, Faculty of Engineering, Saitama University, 255 Shimo-Ohkubo, Sakura-ku, Saitama-shi, Saitama 338-8570, Japan
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