Metal-Organic Vapor Phase Epitaxy Growth and Optical Study of GaAs/GaAs_<1-x>P_x Strained-Barrier Single Quantum Well Structures
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-03-15
著者
-
Onabe Kentaro
Department Of Applied Physics The University Of Tokyo
-
ITO Ryoichi
Department of Physics, Meiji University
-
SHIRAKI Yasuhiro
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo
-
ZHANG Xianmin
Department of Information and Electronic Engineering, Zhejiang University
-
YAGUCHI Hiroyuki
Department of Applied Physics, The University of Tokyo
-
ZHANG Xiao
National Laboratory for High Energy Physics
-
Oki K
Department Of Materials Science And Technology Graduate School Of Engineering Sciences Kyushu Univer
-
ZHANG Xiong
Research Center for Advanced Science and Technology, The University of Tokyo
-
Yaguchi H
Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saita
-
Yaguchi Hiroyuki
Department Of Applied Physics The University Of Tokyo
-
Zhang X
High Energy Accelerator Res. Organization (kek) Ibaraki Jpn
-
Ito R
Meiji Univ. Kawasaki
-
Ito Ryoichi
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
-
Onabe K
Department Of Advanced Materials Science The University Of Tokyo:department Of Applied Physics The U
-
Shiraki Yasuhiro
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
-
Ito Ryoichi
Department Of Applied Physics Faculty And Engineering University Of Tokyo
-
Onabe Kentaro
Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan
関連論文
- Observation of Band Alignment Transition from Type-I to Type-II in AlInAs/AlGaAs Self-assembled Quantum Dots
- P-Type Enhancement-Mode SiGe Doped-Channel Field-Effect Transistor
- A Novel Triple δ-Doped SiGe Heterostructure Field-Effect Transistor
- Fabrication of Periodically Domain-Inverted AlGaAs Quasi-Phase-Matched Devices by GaAs/Ge/GaAs Sublattice Reversal Epitaxy
- Sublattice Reversal in GaAs/Si/GaAs (100) Heterostructures by Molecular Beam Epitaxy
- Interference of Nuclear Bragg Scattered X-Rays in X-Ray Interferometer with Large Optical Path Difference
- Time Domain Interferometry in X-Ray Region Using Nuclear Resonant Scattering
- Flux Growth and Characterization of α-^Fe_2O_3 Single Crystals for Nuclear Bragg Scattering Optical Components
- X-Ray Standing Wave Analysis of GaAs/Si Interface
- High-Resolution Measurements of Nuclear Bragg Scattering from a Synthetic α-^Fe_2O_3 Crystal
- Light-Emitting Substituted Polyacetylenes
- Conducting Polymer-C_ Heterojunctions : Polarity-Independent Electroluminescent Cells
- Electroluminescent Devices Based on Poly (diphenylacetylene) with Carbazolyl Side Groups
- Broad-Band Second-Harmonic Generation in LiNbO_3 Waveguide Using Optimized Domain-Inverted Grating
- Computer-Aided Design of Waveguide Gratings Having Asymmetric Reflectivity Spectra
- Design of Waveguide Grating Based on Simulated Annealing and Narrow-Band Modulation
- Strain Effects of Ge Islands on Si_Ge_x/Si Quantum Well
- Self Formation and Optical Propertied of II-VI Semiconductor Wire Structures
- Effect of Lattice Mismatch on the Solidus Compositions of Ga_xIn_P Liquid Phase Epitaxial Crystals
- Orientation Dependence of LPE Growth Behavior of Ga_xIn_P on (100) and (111)B GaAs Substrates
- Growth Mechanism in the Metalorganic Vapor Phase Epitaxy of Metastable GaP_N_x Alloys: A Growth Interruption Study
- Arsenic Surfactant and Incorporation Effects on Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy
- Metalorganic Vapor Phase Epitaxy Growth of High Quality Cubic GaN on GaAs (100) Substrates
- High Quality Cubic GaN Growth on GaAs (100) Substrates by Metalorganic Vapor Phase Epitaxy
- Crystal Structure of GaN Grown on 3C-SiC Substrates by Metalorganic Vapor Phase Epitaxy
- Mossbauer Time Spectra of the Nuclear Forward Scattering from Coherently Vibrating Resonant Nuclei
- Second-Harmonic Generation from GaP/AlP Multilayers on GaP(111)Substrates Based on Quasi-Phase Matching for the Fundamental Standing Wave
- New Semiconductor Second-Harmonic Generator Based on Quasi-Phase-Matching for Cavity-Enhanced Fundamental Standing Wave
- Fast Lateral Transport of Excitons in a GaAs/AlGaAs Quantum Well
- High-Temperature Metalorganic Vapor Phase Epitaxial Growth of GaAs/AlGaAs Quantum Structures in Tetrahedral-Shaped Recesses on GaAs (111) B Substrates
- Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire-Like Lasers
- GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by Metalorganic Vapor Phase Epitaxy
- Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire Lasers
- GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by MOVPE
- Metalorganic Vapor Phase Eitaxy Growth Features of AlGaAs in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates ( Quantum Dot Structures)
- Rectangular AlGaAs/AlAs Quantum Wires Using Spontaneous Vertical Quantum Wells
- The in Situ Growth of Lateral Confinement Enhanced Rectangular AlGaAs/AlAs Quantum Wires by Utilizing the Spontaneous Vertical Quantum Wells
- Formation of Cubic GaN on (111)B GaAs by Metal-Organic Vapor-Phase Epitaxy with Dimethylhydrazine
- Photoreflectance Study of Interface Roughness in Ge/SiGe Strained-Layer Heterostructures
- Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy
- Transmission Electron Microscope Observation of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy with Dimethylhydrazine on (001) GaAs
- GaAsP Layers Grown on (111)-Oriented GaAs Substrates by Metalorganic Vapor Phase Epitaxy
- Metal-Organic Vapor Phase Epitaxy Growth and Optical Study of GaAs/GaAs_P_x Strained-Barrier Single Quantum Well Structures
- Development of Thin SiGe Relaxed Layers with High-Ge Composition by Ion Implantation Method and Application to Strained Ge Channels
- On Effects of Gate Bias on Hole Effective Mass and Mobility in Strained-Ge Channel Structures
- Thickness Dependence of Strain Field Distribution in SiGe Relaxed Buffer Layers
- Strain-Field Evaluation of Strain-Relaxed Thin SiGe Layers Fabricated by Ion Implantation Method
- Optical Detection of Interdiffusion in Strained Si_Ge_x/Si Quantum Well Structures
- Photoluminescence of Si_Ge_x/Si Quantum Welts with Abrupt Interfaces Formed by Segregant-Assisted Growth
- Band-Edge Photoluminescence of SiGe/Strained-Si/SiGe Type-II Quantum Wells on Si(100)
- Luminescence from Strained Si_Ge_x/Si Quantum Wells Grown by Si Molecular Beam Epitaxy
- Photogeneration and Transport of Carriers in Strained Si_Ge_x/Si Quantum Well Structures
- Quantum Size Effect of Excitonic Band-Edge Luminescence in Strained Si_Ge_x/Si Single Quantum Well Structures Grown by Gas-Source Si Molecular Beam Epitaxy
- Band-Edge Luminescence of Strained Si_xGe_/Si Single Quantum Well Structures Grown on Si(111) by Si Molecular Beam Epitaxy
- Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy
- Control of Macroscopic Absorption Coefficient of Multicrystalline SiGe by Microscopic Compositional Distribution : Semiconductors
- Nuclear Excitation of ^Fe Ions in Hydrochloric Acid Solution Using Synchrotron Radiation
- Measurements of the Depth Profile of the Refractive Indices in Oxide Films on SiC by Spectroscopic Ellipsometry
- Structural Disorder and Optical Property of InGaAsN Alloy Semiconductor (小特集テーマ 進展する窒化物半導体光・電子デバイスの現状,及び一般)
- Structural Disorder and Optical Property of InGaAsN Alloy Semiconductor (小特集テーマ:進展する窒化物半導体光・電子デバイスの現状,及び一般)
- Channel Width Dependence of Mobility in Ge Channel Modulation-Doped Structures
- Si/1ML-Ge/Si(001) Interface Structure Characterized by Surface X-Ray Diffraction and X-Ray Standing-Wave Method
- Nuclear Resonant Excitation of ^Dy and ^Eu by Synchrotron Radiation
- Characterization of Sb Atomic-Layer-Doped Si(100) Crystal by X-Ray Standing Wave Method
- Characterization of Oxide Films on SiC by Spectroscopic Ellipsometry
- Photoreflectance Study of GaAs/GaAsP Strained-Barrier Quantum Well Structures
- Dependence of Band Offsets on Elastic Strain in GaAs/GaAs_P_x Strained-Layer Single Quantum Wells
- Compositional Latching in GaAs_P_x/GaAs Metalorganic Vapor Phase Epitaxy
- Study on Sublattice Reversal in a GaAs/Ge/GaAs(001) Crystal by X-ray Standing Waves
- Band Structure of GaP_N_x(x=0.25, 0.5, 0.75) Ordered Alloys : Semiempirical Tight-Binding Calculation
- MBE-Related Surface Fegregation of Dopant Atoms in Silicon : Condensed Matter
- Device Linear Improvement Using SiGe/Si Heterostructure Delta-Doped-Channel Field-Effect Transistors
- GaAs/Ge/GaAs Sublattice Reversal Epitaxy on GaAs (100) and (111) Substrates for Nonlinear Optical Devices
- Quantitative Evaluation of Silicon Displacement Induced by Arsenic Implantation Using Silicon Isotope Superlattices
- Strain Relaxation and Surface Morphology of Ultrathin High Ge Content SiGe Buffers Grown on Si(001) Substrate
- Extended X-Ray-Absorption Fine-Structure Beats : Application to III-V Semiconductors
- An Extended X-Ray-Absorption Fine-Structure Study of Bond Lengths in GaAs_P_x
- Self-Modulation of Light Output from Semiconductor Injection Lasers with Compound Cavities
- Self-Modulated Light Outputs from Pulsed Injection Lasers with Optical Feedback
- Fabrication of InGaAs Vertical-Cavity Surface-Emitting Laser by Molecular Beam Epitaxy and Its Room-Temperature Operation on (411)A GaAs Substrates
- Mobility Enhancement in Strained Ge Heterostructures by Planarization of SiGe Buffer Layers Grown on Si Substrates
- Anisotropy of Upper Critical Field in Superconducting 2H-NbS_2
- Liquid Phase Epitaxy of Miscible and Immiscible GaInPAs Alloys on (100)-Oriented GaP_xAs_ (x=0, 0.2, 0.4) Substrates
- Photoluminescence of Erbium Implanted in SiGe
- Induction of Heparanase Gene Expression in Ventricular Myocardium of Rats with Isoproterenol-Induced Cardiac Hypertrophy(Pharmacology)
- Fabrication of GaAs Ultrafine Gratings by Single-Layer-Masked SiCl_4 Reactive Ion Etching
- Disappearance of the Breakdown of Quantum Hall Effects in Short Devices
- Optical Properties of Excitons in Semiconductor Quantum Wells
- Oscillator Strength of Excitons in InGaAs/GaAs Quantum Wells
- Nonlinear Optical Coefficient of AlAs Thin Film on GaAs Substrate
- Absolute Measurement of Second-Order Nonlinear Optical Coefficient of LiNbO_3 by Parametric Processes
- Lateral Far-Field Interference Pattern of Buried Heterostructure Lasers
- Deposition of SiO_2 Films on Strained SiGe Layer by Direct Photo Chemical Vapor Deposition
- Output Power Change Associated with Longitudinal Mode Jumping in Semiconductor Injection Lasers
- Strain Relaxation in MBE-Grown Si_Ge_x/Si(100) Heterostructures by Annealing
- Realization of Abrupt Interfaces in Si/Ge Superlattices by Suppressing Ge Surface Segregation with Submonolayer of Sb
- Temperature Dependence of Excitonic $\Gamma_{\text{c}}$–$\Gamma_{\text{v}}$ Transition Energies of GaxIn1-xP Crystals
- Injection-Current-Controlled Bistable Optical Switching in Semiconductor Laser Amplifiers
- Built-in Electric Field Strength in InP/n^+-InP Determined by Photoellipsometry and Photoreflectance
- Well Width Dependence of the Exciton Phonon Interaction in Semiconductor Quantum Wells