Characterization of Sb Atomic-Layer-Doped Si(100) Crystal by X-Ray Standing Wave Method
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-04-15
著者
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Zhang Xiaowei
Photon Factory (pf) Institute Of Materials Structure Science High Energy Accelerator Research Organi
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SAITO AKIRA
Department of Pediatrics, Hirosaki University School of Medicine
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Kitao Shinji
Research Reactor Institute Kyoto University
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KIKUTA Seishi
Department of Applied Physics, Faculty of Engineering, University of Tokyo
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IZUMI Koichi
Department of Applied Physics, Faculty of Engineering, University of Tokyo
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ZHANG Xiao
Photon Factory, Laboratory for High Energy Physics
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Kawado Seiji
Environment & Analysis Technology Department Technical Support Center Sony Corporation
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Kikuta Seishi
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Kawasaki S
Lnstitute For Chemical Research Kyoto University
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ZHANG Xianmin
Department of Information and Electronic Engineering, Zhejiang University
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ZHANG Xiao
National Laboratory for High Energy Physics
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Kikuta Seishi
Department Of Applied Physics Faculty Of Engieering University Of Tokyo
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Saito A
Department Of Material And Life Science Faculty Of Engineering Osaka University
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Zhang X
High Energy Accelerator Res. Organization (kek) Ibaraki Jpn
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Kaito Shinji
Research Reactor Institute Kyoto University
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Ishioka Kunie
National Institute For Materials Sciences Japan.
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Kikuta S
Univ. Tokyo Tokyo
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Izumi K
National Institute For Materials Science
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Ishioka K
National Res. Inst. Metals Tsukuba Jpn
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Saito Akira
Department Of Pathology Juntendo University Urayasu Hospital
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Saito Akira
Department Of Neurosurgery Nagahama Red Cross Hospital
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Saito Akira
Department of Biological Chemistry, Yamaguchi University
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Saito Akira
Department of Applied and Bioapplied Chemistry, Graduate School of Engineering, Osaka City University
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