Output Power Change Associated with Longitudinal Mode Jumping in Semiconductor Injection Lasers
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概要
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Output power change associated with longitudinal mode jumping in an AlGaAs injection laser has been examined. It has been found that the power level for a shorter wavelength mode is higher than that for a longer wavelength mode both at hysteretic mode-jumping and at random mode-switching. The results have been interpreted in terms of asymmetric mode coupling in laser diodes.
- 社団法人応用物理学会の論文
- 1986-07-20
著者
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ITO Ryoichi
Department of Physics, Meiji University
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OGASAWARA Nagaatsu
Department of Applied Physics, Faculty of Engineering, University of Tokyo
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Ito Ryoichi
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Ogasawara Nagaatsu
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Ito Ryoichi
Department Of Applied Physics Faculty And Engineering University Of Tokyo
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