Lateral Far-Field Interference Pattern of Buried Heterostructure Lasers
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概要
- 論文の詳細を見る
Subpeaks in the lateral far-field pattern of buried-heterostructure InGaAsP/InP lasers are shown to be caused by the interference between light scattered at the lateral sidewalls out of the active region and the guided main beam. This is made clear by discriminating the scattered light and the main beam utilizing a screen at the facet. It is demonstrated that the main beam remains to be a fundamental mode and the scattered light intensity is usually 30% or less of the main beam intensity, even for a diode that exhibits a highly complicated far-field pattern.
- 社団法人応用物理学会の論文
- 1987-08-20
著者
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ITO Ryoichi
Department of Physics, Meiji University
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OGASAWARA Nagaatsu
Department of Applied Physics, Faculty of Engineering, University of Tokyo
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Ito Ryoichi
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Junyaprasert Kuntigo
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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AIKI Kunio
Takasaki Works, Hitachi, Ltd.
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Aiki K
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology:(present)aich
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Aiki Kunio
Takasaki Works Hitachi Ltd.
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Ogasawara Nagaatsu
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Ito Ryoichi
Department Of Applied Physics Faculty And Engineering University Of Tokyo
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