Rectangular AlGaAs/AlAs Quantum Wires Using Spontaneous Vertical Quantum Wells

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概要

• 論文の詳細を見る
• 1996-02-01

著者

• Onabe Kentaro

  Department Of Applied Physics The University Of Tokyo

• Usami Noritaka

  Tohoku Univ. Miyagi Jpn

• ITO Ryoichi

  Department of Physics, Meiji University

• SHIRAKI Yasuhiro

  Research Center for Advanced Science and Technology (RCAST), The University of Tokyo

• Usami Noritaka

  Institute For Material Research Tohoku University

• Usami Noritaka

  Research Center For Advanced Science And Technology (rcast) The University Of Tokyo

• Pan W

  Tohoku Univ. Sendai Jpn

• Pan Wugan

  3d Microphotonics Project Kanagawa Academy Of Science & Technology

• YAGUCHI Hiroyuki

  Department of Applied Physics, The University of Tokyo

• Oki K

  Department Of Materials Science And Technology Graduate School Of Engineering Sciences Kyushu Univer

• PAN Wugen

  Department of Applied Physics, Faculty of Engineering, The University of Tokyo

• Yaguchi H

  Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saita

• Yaguchi Hiroyuki

  Department Of Applied Physics The University Of Tokyo

• Ito R

  Meiji Univ. Kawasaki

• Ito Ryoichi

  Department Of Applied Physics Faculty Of Engineering The University Of Tokyo

• Onabe K

  Department Of Advanced Materials Science The University Of Tokyo:department Of Applied Physics The U

• Shiraki Yasuhiro

  Research Center For Advanced Science And Technology (rcast) The University Of Tokyo

• Ito Ryoichi

  Department Of Applied Physics Faculty And Engineering University Of Tokyo

関連論文

• Floating Zone Growth of Si Bicrystals Using Seed Crystals with Artificially Designed Grain Boundary Configuration
• Observation of Band Alignment Transition from Type-I to Type-II in AlInAs/AlGaAs Self-assembled Quantum Dots
• P-Type Enhancement-Mode SiGe Doped-Channel Field-Effect Transistor
• A Novel Triple δ-Doped SiGe Heterostructure Field-Effect Transistor
• Fabrication of Periodically Domain-Inverted AlGaAs Quasi-Phase-Matched Devices by GaAs/Ge/GaAs Sublattice Reversal Epitaxy
• Sublattice Reversal in GaAs/Si/GaAs (100) Heterostructures by Molecular Beam Epitaxy
• Broad-Band Second-Harmonic Generation in LiNbO_3 Waveguide Using Optimized Domain-Inverted Grating
• Computer-Aided Design of Waveguide Gratings Having Asymmetric Reflectivity Spectra
• Design of Waveguide Grating Based on Simulated Annealing and Narrow-Band Modulation
• Preparation of a TiO-2 Film Coated Si Device for Photo-Decomposition of Water by CVD Method Using Ti(OPr^i)_4
• Strain Effects of Ge Islands on Si_Ge_x/Si Quantum Well
• Functional Enhancement of Metal-Semiconductor-Metal (MSM) Infrared Photodetectors on Heteroepitaxial SiGe-on-Si Using the Anodic Oxidation/Passivation Method
• High Sensitive Imaging of Atomic Arrangement of Ge Clusters Buried in a Si Crystal by X-ray Fluorescence Holography
• Self Formation and Optical Propertied of II-VI Semiconductor Wire Structures
• Effect of Lattice Mismatch on the Solidus Compositions of Ga_xIn_P Liquid Phase Epitaxial Crystals
• Orientation Dependence of LPE Growth Behavior of Ga_xIn_P on (100) and (111)B GaAs Substrates
• Growth Mechanism in the Metalorganic Vapor Phase Epitaxy of Metastable GaP_N_x Alloys: A Growth Interruption Study
• Arsenic Surfactant and Incorporation Effects on Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy
• Metalorganic Vapor Phase Epitaxy Growth of High Quality Cubic GaN on GaAs (100) Substrates
• High Quality Cubic GaN Growth on GaAs (100) Substrates by Metalorganic Vapor Phase Epitaxy
• Crystal Structure of GaN Grown on 3C-SiC Substrates by Metalorganic Vapor Phase Epitaxy
• Second-Harmonic Generation from GaP/AlP Multilayers on GaP(111)Substrates Based on Quasi-Phase Matching for the Fundamental Standing Wave
• New Semiconductor Second-Harmonic Generator Based on Quasi-Phase-Matching for Cavity-Enhanced Fundamental Standing Wave
• Fast Lateral Transport of Excitons in a GaAs/AlGaAs Quantum Well
• Modification of Local Structure and Its Influence on Electrical Activity of Near (310) *5 Grain Boundary in Bulk Silicon
• High-Temperature Metalorganic Vapor Phase Epitaxial Growth of GaAs/AlGaAs Quantum Structures in Tetrahedral-Shaped Recesses on GaAs (111) B Substrates
• Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire-Like Lasers
• GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by Metalorganic Vapor Phase Epitaxy
• Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire Lasers
• GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by MOVPE
• Metalorganic Vapor Phase Eitaxy Growth Features of AlGaAs in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates ( Quantum Dot Structures)
• Rectangular AlGaAs/AlAs Quantum Wires Using Spontaneous Vertical Quantum Wells
• The in Situ Growth of Lateral Confinement Enhanced Rectangular AlGaAs/AlAs Quantum Wires by Utilizing the Spontaneous Vertical Quantum Wells
• Formation of Cubic GaN on (111)B GaAs by Metal-Organic Vapor-Phase Epitaxy with Dimethylhydrazine
• Photoreflectance Study of Interface Roughness in Ge/SiGe Strained-Layer Heterostructures
• Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy
• Transmission Electron Microscope Observation of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy with Dimethylhydrazine on (001) GaAs
• GaAsP Layers Grown on (111)-Oriented GaAs Substrates by Metalorganic Vapor Phase Epitaxy
• Metal-Organic Vapor Phase Epitaxy Growth and Optical Study of GaAs/GaAs_P_x Strained-Barrier Single Quantum Well Structures
• Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation
• Development of Thin SiGe Relaxed Layers with High-Ge Composition by Ion Implantation Method and Application to Strained Ge Channels
• On Effects of Gate Bias on Hole Effective Mass and Mobility in Strained-Ge Channel Structures
• Thickness Dependence of Strain Field Distribution in SiGe Relaxed Buffer Layers
• Strain-Field Evaluation of Strain-Relaxed Thin SiGe Layers Fabricated by Ion Implantation Method
• Optical Detection of Interdiffusion in Strained Si_Ge_x/Si Quantum Well Structures
• Photoluminescence of Si_Ge_x/Si Quantum Welts with Abrupt Interfaces Formed by Segregant-Assisted Growth
• Band-Edge Photoluminescence of SiGe/Strained-Si/SiGe Type-II Quantum Wells on Si(100)
• Luminescence from Strained Si_Ge_x/Si Quantum Wells Grown by Si Molecular Beam Epitaxy
• Photogeneration and Transport of Carriers in Strained Si_Ge_x/Si Quantum Well Structures
• Quantum Size Effect of Excitonic Band-Edge Luminescence in Strained Si_Ge_x/Si Single Quantum Well Structures Grown by Gas-Source Si Molecular Beam Epitaxy
• Band-Edge Luminescence of Strained Si_xGe_/Si Single Quantum Well Structures Grown on Si(111) by Si Molecular Beam Epitaxy
• Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy
• Structural Origin of a Cluster of Bright Spots in Reverse Bias Electroluminescence Image of Solar Cells Based on Si Multicrystals
• On the Origin of Improved Conversion Efficiency of Solar Cells Based on SiGe with Compositional Distribution
• Evidence of the Presence of Built-in Strain in Multicrystalline SiGe with Large Compositional Distribution
• Control of Macroscopic Absorption Coefficient of Multicrystalline SiGe by Microscopic Compositional Distribution : Semiconductors
• Growth of Si_xGe_(x〓0.15) Bulk Crystal with Uniform Composition Utilizing in situ Monitoring of the Crystal-solution Interface
• In Situ Measurement of Composition in High-Temperature Solutions by X-Ray Fluorescence Spectrometry
• Fabrication of SiGe-on-Insulator through Thermal Diffusion of Ge on Si-on-Insulator Substrate
• On the Controlling Mechanism of Preferential Orientation of Polycrystalline-Silicon Thin Films Grown by Aluminum-Induced Crystallization
• Toward high-efficiency thin-film solar cells using semiconducting BaSi_2(Session 1A : Emerging Device Technology 1)
• Structural Disorder and Optical Property of InGaAsN Alloy Semiconductor (小特集テーマ 進展する窒化物半導体光・電子デバイスの現状,及び一般)
• Structural Disorder and Optical Property of InGaAsN Alloy Semiconductor (小特集テーマ:進展する窒化物半導体光・電子デバイスの現状,及び一般)
• Channel Width Dependence of Mobility in Ge Channel Modulation-Doped Structures
• Si/1ML-Ge/Si(001) Interface Structure Characterized by Surface X-Ray Diffraction and X-Ray Standing-Wave Method
• Photoreflectance Study of GaAs/GaAsP Strained-Barrier Quantum Well Structures
• Dependence of Band Offsets on Elastic Strain in GaAs/GaAs_P_x Strained-Layer Single Quantum Wells
• Compositional Latching in GaAs_P_x/GaAs Metalorganic Vapor Phase Epitaxy
• Study on Sublattice Reversal in a GaAs/Ge/GaAs(001) Crystal by X-ray Standing Waves
• Band Structure of GaP_N_x(x=0.25, 0.5, 0.75) Ordered Alloys : Semiempirical Tight-Binding Calculation
• MBE-Related Surface Fegregation of Dopant Atoms in Silicon : Condensed Matter
• Device Linear Improvement Using SiGe/Si Heterostructure Delta-Doped-Channel Field-Effect Transistors
• GaAs/Ge/GaAs Sublattice Reversal Epitaxy on GaAs (100) and (111) Substrates for Nonlinear Optical Devices
• Quantitative Evaluation of Silicon Displacement Induced by Arsenic Implantation Using Silicon Isotope Superlattices
• Strain Relaxation and Surface Morphology of Ultrathin High Ge Content SiGe Buffers Grown on Si(001) Substrate
• Extended X-Ray-Absorption Fine-Structure Beats : Application to III-V Semiconductors
• An Extended X-Ray-Absorption Fine-Structure Study of Bond Lengths in GaAs_P_x
• Self-Modulation of Light Output from Semiconductor Injection Lasers with Compound Cavities
• Self-Modulated Light Outputs from Pulsed Injection Lasers with Optical Feedback
• Fabrication of InGaAs Vertical-Cavity Surface-Emitting Laser by Molecular Beam Epitaxy and Its Room-Temperature Operation on (411)A GaAs Substrates
• Mobility Enhancement in Strained Ge Heterostructures by Planarization of SiGe Buffer Layers Grown on Si Substrates
• Anisotropy of Upper Critical Field in Superconducting 2H-NbS_2
• Liquid Phase Epitaxy of Miscible and Immiscible GaInPAs Alloys on (100)-Oriented GaP_xAs_ (x=0, 0.2, 0.4) Substrates
• Photoluminescence of Erbium Implanted in SiGe
• Induction of Heparanase Gene Expression in Ventricular Myocardium of Rats with Isoproterenol-Induced Cardiac Hypertrophy(Pharmacology)
• Fabrication of GaAs Ultrafine Gratings by Single-Layer-Masked SiCl_4 Reactive Ion Etching
• Disappearance of the Breakdown of Quantum Hall Effects in Short Devices
• Optical Properties of Excitons in Semiconductor Quantum Wells
• Oscillator Strength of Excitons in InGaAs/GaAs Quantum Wells
• Nonlinear Optical Coefficient of AlAs Thin Film on GaAs Substrate
• Absolute Measurement of Second-Order Nonlinear Optical Coefficient of LiNbO_3 by Parametric Processes
• Lateral Far-Field Interference Pattern of Buried Heterostructure Lasers
• Deposition of SiO_2 Films on Strained SiGe Layer by Direct Photo Chemical Vapor Deposition
• Output Power Change Associated with Longitudinal Mode Jumping in Semiconductor Injection Lasers
• Strain Relaxation in MBE-Grown Si_Ge_x/Si(100) Heterostructures by Annealing
• Realization of Abrupt Interfaces in Si/Ge Superlattices by Suppressing Ge Surface Segregation with Submonolayer of Sb
• Temperature Dependence of Excitonic $\Gamma_{\text{c}}$–$\Gamma_{\text{v}}$ Transition Energies of GaxIn1-xP Crystals
• Injection-Current-Controlled Bistable Optical Switching in Semiconductor Laser Amplifiers
• Built-in Electric Field Strength in InP/n^+-InP Determined by Photoellipsometry and Photoreflectance
• Well Width Dependence of the Exciton Phonon Interaction in Semiconductor Quantum Wells

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