Device Linear Improvement Using SiGe/Si Heterostructure Delta-Doped-Channel Field-Effect Transistors

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2000-11-15

著者

• WU San

  Department of Electronics Engineering, Cheng Shiu University

• SHIRAKI Yasuhiro

  Research Center for Advanced Science and Technology (RCAST), The University of Tokyo

• Wang Yan

  Department Of Electrical Engineering National Cheng Kung University

• MIURA Hidetoshi

  Research Center for Advanced Science and Technology, The University of Tokyo

• Wang Yan

  Department Of Cardiovascular Sciences Oita University School Of Medicine

• Shiraki Yasuhiro

  School Of Fundamental Science And Technology Keio University

• Wu S

  Department Of Electronics Engineering Cheng Shiu University

• Wu San

  Department Of Electronics Engineering Cheng Shiu Institute Of Technology

• Wu San

  Department Of Electronic Engineering Cheng Shiu University

• Miura Hidetoshi

  Research Center For Advanced Science And Technology (rcast) The University Of Tokyo

• Chien Pei

  Department Of Electrical Engineering National Cheng Kung University

• Shiraki Y

  Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol

• Chang S

  Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University

• Chang Shoou

  Department Of Electrical Engineering National Cheng Kung University

• Shiraki Yasuhiro

  Research Center For Advanced Science And Technology (rcast) The University Of Tokyo

• Wang Yan

  Department Of Biology Graduate University Of Chinese Academy Of Sciences

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