A New Silicon Field-Effect Transistors with Two-Hole-Transport-Mode (HTM) Channels Grown by Molecular Beam Epitaxy (MBE)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-11-01
著者
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Wang Yan
Department Of Electrical Engineering National Cheng Kung University
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Wang Yan
Department Of Cardiovascular Sciences Oita University School Of Medicine
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Wu S
Department Of Electronics Engineering Cheng Shiu University
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Wu San
Department Of Electronics Engineering Cheng Shiu Institute Of Technology
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Wu San
Department Of Electronic Engineering Cheng Shiu University
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Chang S
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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Chang Shoou
Department Of Electrical Engineering National Cheng Kung University
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WU San
Electronics Department, Nan Jeon Junior College of Technology & Commerce
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HAN Tzung
Department of Electrical Engineering, National Cheng Kung University
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Han Tzung
Department Of Electrical Engineering National Cheng Kung University
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Wang Yan
Department Of Biology Graduate University Of Chinese Academy Of Sciences
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Han Tzung
Electronics Department, Nan Jeon Junior College of Technology & Commerce
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