The Study of GaN and InGaN Metal-Semiconductor-Metal Photodetectors with Different Schottky Contact Metals

スポンサーリンク

概要

• 論文の詳細を見る
• 2000-08-28

著者

• Su Yan

  Department Of Electrical Engineering National Cheng Kung University

• CHIOU Y.

  Department of Electronics Engineering, Southern Taiwan University of Technology

• Chang Shoou

  Department Of Electrical Engineering National Cheng Kung University

• Juang Fuh

  Department Of Electro-optics Engineering National Huwei Institute Of Technology

• Juang Fuh

  Department Of Electrical Engineering National Cheng Kung University

• SHIU J.

  Department of Electrical Engineering, National Cheng Kung University

• Chiou Y.

  Department Of Electrical Engineering National Cheng Kung University

• Shiu J.

  Department Of Electrical Engineering National Cheng Kung University

• CHANG Shoou

  Department of Electrical Engineering, National Cheng Kung University

関連論文

• High Reliable Nitride Based LEDs with Internal ESD Protection
• Nitride-based p-i-n Photodetectors with ITO p-contacts
• Noise Analysis of AlGaN/GaN MOS-HFETs with Photochemical-Vapor Deposition SiO_2 Layer
• Reactive Ion Etching of ZnS Films using a Gas Mixture of Methane/Hydrogen/Argon
• A 10-in. Diagonal ZnS:Mn TFEL Panel Fabricated by a Sequential Vacuum Deposition Apparatus
• Characteristics of Indium-Tin Oxide Thin Film Etched by Reactive Ion Etching
• ZnS Thin Films Prepared by Low-Pressure Metalorganic Chemical Vapor Deposition
• Device Linear Improvement Using SiGe/Si Heterostructure Delta-Doped-Channel Field-Effect Transistors
• Vertical High Quality Mirrorlike Facet of GaN-Based Device by Reactive Ion Etching
• Electric Field Effect on ZnSe Thin Films Prepared by Metalorganic Chemical Vapor Deposition
• Current Density-Voltage Characteristics of AC Thin-Film Electroluminescent Devices with Different Dielectric-Phosphor Interfaces
• Effects of Insulating Layers and Active Layer on ZnS:Tb, F Thin-Film Electroluminescent Devices
• Effects of [H_2S]/[DMZn] Molar Ratio on ZnS Films Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
• High Dielectric Constant of RF-Sputtered HfO_2 Thin Films
• Strained Si_Ge_x Normal-Graded Channel P-Type Metal Oxide Semiconductor Field Effect Transistor
• A New Silicon Field-Effect Transistors with Two-Hole-Transport-Mode (HTM) Channels Grown by Molecular Beam Epitaxy (MBE)
• The Current-Voltage Characteristics of a Delta-Doped Triple-Barrier Switch
• The Study of GaN and InGaN Metal-Semiconductor-Metal Photodetectors with Different Schottky Contact Metals
• The Study of Metal-GaN Interface of Schottky Contacts with Different Metals
• Ohmic Contacts of AuGeNi and Ag/AuGeNi to n-GaSb with Various Sintering Temperatures
• Effect of Atomic Layer Epitaxy Growth Conditions on the Properties of ZnS Epilayers on (100)-Si Substrate
• The Variation of In_xGa_Sb Solid Compositions with the Vapor Phase Mole Fractions at Different Growth Pressures in Metal Organic Chemical Vapor Deposition
• Negative Differntial Resistance in GaAs Delta-Doping Tunneling Diodes
• Investigation of the Influence of In_Ga_As Relaxed Layer InAs/In_Ga_As/GaAs Double Quantum Well Resonant Interband Tunneling Structure
• Atomic Layer Epitaxy of ZnS by Low-Pressure Horizontal Metalorganic Chemical Vapor Deposition
• Variety Transformation of Compound at GaSb Surface under Sulfur Passivation
• Effect of Annealing Process on Trap Properties in High-k/Metal Gate n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors through Low-Frequency Noise and Random Telegraph Noise Characterization
• Atomic Layer Epitaxy of ZnS by Low-Pressure Horizontal Metalorganic Chemical Vapor Deposition

もっと見る 閉じる

スポンサーリンク